Highly-scalable disruptive reading scheme for Gb-scale SPRAM and beyond

R. Takemura, T. Kawahara, K. Ono, K. Miura, H. Matsuoka, H. Ohno

Research output: Chapter in Book/Report/Conference proceedingConference contribution

38 Citations (Scopus)

Abstract

We propose a disruptive reading and restoring schemes for high-density SPRAM. The proposed scheme uses the feature that, with a desired error rate, TMR device doesn't switch its magnetization of free layer in a specific period of large current pulse. The restoring operation is performed to ensure the storing data. As a result, keeping the good scalability of spin-transfer torque writing toward Gb-scale and beyond, high speed reading with read-disturbance-free operation can be achieved. This operation also enables the SPRAM to accept the DDRx-SDRAM compatible operation.

Original languageEnglish
Title of host publication2010 IEEE International Memory Workshop, IMW 2010
DOIs
Publication statusPublished - 2010 Oct 20
Event2010 IEEE International Memory Workshop, IMW 2010 - Seoul, Korea, Republic of
Duration: 2010 May 162010 May 19

Publication series

Name2010 IEEE International Memory Workshop, IMW 2010

Other

Other2010 IEEE International Memory Workshop, IMW 2010
CountryKorea, Republic of
CitySeoul
Period10/5/1610/5/19

Keywords

  • Disruptive reading
  • MRAM
  • Restoring and TMR
  • SPRAM

ASJC Scopus subject areas

  • Hardware and Architecture

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