Highly-scalable disruptive reading and restoring scheme for Gb-scale SPRAM and beyond

R. Takemura, T. Kawahara, K. Ono, K. Miura, H. Matsuoka, H. Ohno

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We propose a disruptive reading and restoration scheme for a high density spin-transfer-torque random access memory (SPRAM). The proposed scheme uses the feature that - with a desired error rate and a tunnel magneto resistance (TMR) device, which is the memory device of the SPRAM - does not switch its magnetization of free layer in a specific period of large current pulse. The restoration operation is performed to secure the storing data. As a result, by keeping good scalability of spin-transfer-torque writing toward Gb-scale and beyond, high-speed reading with read-disturbance-free operation can be achieved. This operation also enables the SPRAM to accept the DDRx-SDRAM compatible operation. In addition, we also proposed a 4-F2 cell structure with a vertical transistor and prospected the reliability of a tunnel barrier of the TMR devices for a Gb-scale SPRAM.

Original languageEnglish
Pages (from-to)28-33
Number of pages6
JournalSolid-State Electronics
Volume58
Issue number1
DOIs
Publication statusPublished - 2011 Apr 1

Keywords

  • DDR compatible operation
  • Disruptive reading
  • Nonvolatile RAM
  • SPRAM
  • Spin-transfer-torque
  • TMR

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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