Highly-scalable disruptive reading and restoring scheme for Gb-scale SPRAM and beyond

R. Takemura; T. Kawahara; K. Ono; K. Miura; H. Matsuoka; H. Ohno

doi:10.1016/j.sse.2010.11.032

Highly-scalable disruptive reading and restoring scheme for Gb-scale SPRAM and beyond

R. Takemura, T. Kawahara, K. Ono, K. Miura, H. Matsuoka, H. Ohno

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Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We propose a disruptive reading and restoration scheme for a high density spin-transfer-torque random access memory (SPRAM). The proposed scheme uses the feature that - with a desired error rate and a tunnel magneto resistance (TMR) device, which is the memory device of the SPRAM - does not switch its magnetization of free layer in a specific period of large current pulse. The restoration operation is performed to secure the storing data. As a result, by keeping good scalability of spin-transfer-torque writing toward Gb-scale and beyond, high-speed reading with read-disturbance-free operation can be achieved. This operation also enables the SPRAM to accept the DDRx-SDRAM compatible operation. In addition, we also proposed a 4-F² cell structure with a vertical transistor and prospected the reliability of a tunnel barrier of the TMR devices for a Gb-scale SPRAM.

Original language	English
Pages (from-to)	28-33
Number of pages	6
Journal	Solid-State Electronics
Volume	58
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2010.11.032
Publication status	Published - 2011 Apr

Keywords

DDR compatible operation
Disruptive reading
Nonvolatile RAM
SPRAM
Spin-transfer-torque
TMR

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2010.11.032

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title = "Highly-scalable disruptive reading and restoring scheme for Gb-scale SPRAM and beyond",

abstract = "We propose a disruptive reading and restoration scheme for a high density spin-transfer-torque random access memory (SPRAM). The proposed scheme uses the feature that - with a desired error rate and a tunnel magneto resistance (TMR) device, which is the memory device of the SPRAM - does not switch its magnetization of free layer in a specific period of large current pulse. The restoration operation is performed to secure the storing data. As a result, by keeping good scalability of spin-transfer-torque writing toward Gb-scale and beyond, high-speed reading with read-disturbance-free operation can be achieved. This operation also enables the SPRAM to accept the DDRx-SDRAM compatible operation. In addition, we also proposed a 4-F2 cell structure with a vertical transistor and prospected the reliability of a tunnel barrier of the TMR devices for a Gb-scale SPRAM.",

keywords = "DDR compatible operation, Disruptive reading, Nonvolatile RAM, SPRAM, Spin-transfer-torque, TMR",

author = "R. Takemura and T. Kawahara and K. Ono and K. Miura and H. Matsuoka and H. Ohno",

note = "Funding Information: This work was supported in part by “High-Performance Low-Power Consumption Spin Devices and Storage Systems” Program under Research and Development for Next-Generation Information Technology of MEXT. The authors would like to thank Prof. S. Ikeda, Prof. T. Endoh, M. Yamanouchi, J. Hayakawa, H. Yamamoto, S. Yamaguchi, N. Matsuzaki, K. Ito, H. Takahashi, H. Hasegawa, and K. Itoh for their valuable support. The authors also appreciate the encouragement given by K. Torii, N. Irie, and Y. Goto of the Hitachi Central Research Laboratory.",

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T1 - Highly-scalable disruptive reading and restoring scheme for Gb-scale SPRAM and beyond

AU - Takemura, R.

AU - Kawahara, T.

AU - Ono, K.

AU - Miura, K.

AU - Matsuoka, H.

AU - Ohno, H.

N1 - Funding Information: This work was supported in part by “High-Performance Low-Power Consumption Spin Devices and Storage Systems” Program under Research and Development for Next-Generation Information Technology of MEXT. The authors would like to thank Prof. S. Ikeda, Prof. T. Endoh, M. Yamanouchi, J. Hayakawa, H. Yamamoto, S. Yamaguchi, N. Matsuzaki, K. Ito, H. Takahashi, H. Hasegawa, and K. Itoh for their valuable support. The authors also appreciate the encouragement given by K. Torii, N. Irie, and Y. Goto of the Hitachi Central Research Laboratory.

PY - 2011/4

Y1 - 2011/4

N2 - We propose a disruptive reading and restoration scheme for a high density spin-transfer-torque random access memory (SPRAM). The proposed scheme uses the feature that - with a desired error rate and a tunnel magneto resistance (TMR) device, which is the memory device of the SPRAM - does not switch its magnetization of free layer in a specific period of large current pulse. The restoration operation is performed to secure the storing data. As a result, by keeping good scalability of spin-transfer-torque writing toward Gb-scale and beyond, high-speed reading with read-disturbance-free operation can be achieved. This operation also enables the SPRAM to accept the DDRx-SDRAM compatible operation. In addition, we also proposed a 4-F2 cell structure with a vertical transistor and prospected the reliability of a tunnel barrier of the TMR devices for a Gb-scale SPRAM.

AB - We propose a disruptive reading and restoration scheme for a high density spin-transfer-torque random access memory (SPRAM). The proposed scheme uses the feature that - with a desired error rate and a tunnel magneto resistance (TMR) device, which is the memory device of the SPRAM - does not switch its magnetization of free layer in a specific period of large current pulse. The restoration operation is performed to secure the storing data. As a result, by keeping good scalability of spin-transfer-torque writing toward Gb-scale and beyond, high-speed reading with read-disturbance-free operation can be achieved. This operation also enables the SPRAM to accept the DDRx-SDRAM compatible operation. In addition, we also proposed a 4-F2 cell structure with a vertical transistor and prospected the reliability of a tunnel barrier of the TMR devices for a Gb-scale SPRAM.

KW - DDR compatible operation

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KW - Spin-transfer-torque

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Highly-scalable disruptive reading and restoring scheme for Gb-scale SPRAM and beyond

Abstract

Keywords

ASJC Scopus subject areas

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