Abstract
We propose a disruptive reading and restoration scheme for a high density spin-transfer-torque random access memory (SPRAM). The proposed scheme uses the feature that - with a desired error rate and a tunnel magneto resistance (TMR) device, which is the memory device of the SPRAM - does not switch its magnetization of free layer in a specific period of large current pulse. The restoration operation is performed to secure the storing data. As a result, by keeping good scalability of spin-transfer-torque writing toward Gb-scale and beyond, high-speed reading with read-disturbance-free operation can be achieved. This operation also enables the SPRAM to accept the DDRx-SDRAM compatible operation. In addition, we also proposed a 4-F2 cell structure with a vertical transistor and prospected the reliability of a tunnel barrier of the TMR devices for a Gb-scale SPRAM.
Original language | English |
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Pages (from-to) | 28-33 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 58 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2011 Apr |
Keywords
- DDR compatible operation
- Disruptive reading
- Nonvolatile RAM
- SPRAM
- Spin-transfer-torque
- TMR
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry