Highly robust ultrathin silicon nitride films grown at low-temperature by microwave-excitation high-density plasma for giga scale integration

Katsuyuki Sekine, Yuji Saito, Masaki Hirayama, Tadahiro Ohmi

Research output: Contribution to journalArticle

36 Citations (Scopus)

Abstract

This paper focuses attention on electrical properties of ultra-thin silicon nitride films grown by radial line slot antenna high-density plasma system at a temperature of 400°C as an advanced gate dielectric film. The results show low density of interface trap and bulk charge, lower leakage current than jet vapor deposition silicon nitride and thermally grown silicon oxide with same equivalent oxide thickness. Furthermore, they represent high breakdown field intensity, almost no stress-induced leakage current, very little trap generation even in high-field stress, and excellent resistance to boron penetration and oxidation.

Original languageEnglish
Pages (from-to)1370-1374
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume47
Issue number7
DOIs
Publication statusPublished - 2000 Jul 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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