Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma

Katsuyuki Sekine, Yuji Saito, Masaki Hirayama, Tadahiro Ohmi

Research output: Contribution to journalArticlepeer-review

103 Citations (Scopus)

Abstract

This paper focuses attention on electrical properties of silicon oxide films grown by oxygen radical generated in Kr/O2 mixed high-density microwave-excited plasma at 400°C. They represent high growth rate, low activation energy, high dielectric strength, high charge-to-breakdown, and low interface trap and bulk charge enough to replace thermally grown silicon oxide.

Original languageEnglish
Pages (from-to)1550-1555
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume48
Issue number8
DOIs
Publication statusPublished - 2001 Aug

Keywords

  • MOS capacitors
  • Oxygen radical
  • Silicon oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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