This paper focuses attention on electrical properties of silicon oxide films grown by oxygen radical generated in Kr/O2 mixed high-density microwave-excited plasma at 400°C. They represent high growth rate, low activation energy, high dielectric strength, high charge-to-breakdown, and low interface trap and bulk charge enough to replace thermally grown silicon oxide.
- MOS capacitors
- Oxygen radical
- Silicon oxide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering