Highly reliable TaO x ReRAM and direct evidence of redox reaction mechanism

Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, K. Tsuji, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. SugayaT. Takagi, R. Yasuhara, KHoriba, H. Kumigashira, M. Oshima

Research output: Chapter in Book/Report/Conference proceedingConference contribution

147 Citations (Scopus)

Abstract

Highly reliable TaOx ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 10 9 cycles, sufficient retention exceeding 10 years at 85°C. TaO x exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 μm CMOS process.

Original languageEnglish
Title of host publication2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs
Publication statusPublished - 2008 Dec 1
Externally publishedYes
Event2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States
Duration: 2008 Dec 152008 Dec 17

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2008 IEEE International Electron Devices Meeting, IEDM 2008
CountryUnited States
CitySan Francisco, CA
Period08/12/1508/12/17

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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