Highly reliable SRAM circuit technology using FinFETs

Shin Ichi O'uchi, Kazuhiko Endo, Takashi Matsukawa, Yongxun Liu, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Kunihiro Sakamoto, Meishoku Masahara

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper introduces a flex-pass-gate SRAM (Flex-PG SRAM), which is a FinFET-based SRAM to enhance both the read and write margins independently. The flip-flop in the Flex-PG SRAM consists of usual FinFETs, while the pass gates consist of double-"independent"-gate FinFETs, i.e., "four-terminal"- (4T-) FinFETs. By optimizing the current drivability in the 4T-FinFET pass gates according to operational conditions of read and write, both the read and write margins are enhanced. TCAD simulations revealed that the Flex-PG SRAM increases the read margin by 71 mV without the cell size penalty and decrease in the write margin, even when its 6σ tolerance is ensured. Also, a fabricated device proved its feasibility.

Original languageEnglish
Title of host publicationECS Transactions - Silicon-on-Insulator Technology and Devices 14 - 215th Meeting of the Electrochemical Society
Pages273-282
Number of pages10
Edition4
DOIs
Publication statusPublished - 2009 Dec 1
Externally publishedYes
Event14th International Symposium on Silicon-On-Insulator Technology and Devices - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States
Duration: 2009 May 242009 May 29

Publication series

NameECS Transactions
Number4
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other14th International Symposium on Silicon-On-Insulator Technology and Devices - 215th Meeting of the Electrochemical Society
CountryUnited States
CitySan Francisco, CA
Period09/5/2409/5/29

ASJC Scopus subject areas

  • Engineering(all)

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