Highly reliable SiO2 films formed by UV-O2 oxidation

Akinobu Teramoto, Kiyoteru Kobayashi, Yoshikazu Ohno, Makoto Hirayama

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We have developed and evaluated SiO2 films formed in a dry oxygen ambient at 600-900°C under ultraviolet irradiation (UV-O2 oxidation). It has been found that the constant current time-dependent-dielectric-breakdown (TDDB), stress induced leakage current and the hole-trapping characteristics of SiO2 films formed by the UV-O2 oxidation at 900°C, are superior to those formed by the conventional dry oxidation. The TDDB lifetime of the SiO2 films formed by the UV-O2 oxidation at 600°C is also longer than that formed by the conventional dry oxidation at 900°C and wet oxidation at 600°C. These facts indicate that the highly reliable gate oxide is realized by the UV-O2 oxidation. The UV-O2 oxidation technology is very useful for the production of future devices which require low-temperature processing.

Original languageEnglish
Pages (from-to)1122-1124
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume37
Issue number3 SUPPL. B
Publication statusPublished - 1998 Mar 1
Externally publishedYes

Keywords

  • Hole trap
  • Low temperature oxidation
  • Silicon dioxide
  • Stress induced leakage current
  • Time dependent dielectric breakdown
  • Ultraviolet rays

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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