Abstract
We have developed and evaluated SiO2 films formed in a dry oxygen ambient at 600-900°C under ultraviolet irradiation (UV-O2 oxidation). It has been found that the constant current time-dependent-dielectric-breakdown (TDDB), stress induced leakage current and the hole-trapping characteristics of SiO2 films formed by the UV-O2 oxidation at 900°C, are superior to those formed by the conventional dry oxidation. The TDDB lifetime of the SiO2 films formed by the UV-O2 oxidation at 600°C is also longer than that formed by the conventional dry oxidation at 900°C and wet oxidation at 600°C. These facts indicate that the highly reliable gate oxide is realized by the UV-O2 oxidation. The UV-O2 oxidation technology is very useful for the production of future devices which require low-temperature processing.
| Original language | English |
|---|---|
| Pages (from-to) | 1122-1124 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 37 |
| Issue number | 3 SUPPL. B |
| Publication status | Published - 1998 Mar 1 |
| Externally published | Yes |
Keywords
- Hole trap
- Low temperature oxidation
- Silicon dioxide
- Stress induced leakage current
- Time dependent dielectric breakdown
- Ultraviolet rays
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)