Highly reliable SiO2 films formed by UV-O2 oxidation

Akinobu Teramoto; Kiyoteru Kobayashi; Yoshikazu Ohno; Makoto Hirayama

doi:10.1143/jjap.37.1122

Highly reliable SiO₂ films formed by UV-O₂ oxidation

Akinobu Teramoto, Kiyoteru Kobayashi, Yoshikazu Ohno, Makoto Hirayama

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have developed and evaluated SiO₂ films formed in a dry oxygen ambient at 600-900°C under ultraviolet irradiation (UV-O₂ oxidation). It has been found that the constant current time-dependent-dielectric-breakdown (TDDB), stress induced leakage current and the hole-trapping characteristics of SiO₂ films formed by the UV-O₂ oxidation at 900°C, are superior to those formed by the conventional dry oxidation. The TDDB lifetime of the SiO₂ films formed by the UV-O₂ oxidation at 600°C is also longer than that formed by the conventional dry oxidation at 900°C and wet oxidation at 600°C. These facts indicate that the highly reliable gate oxide is realized by the UV-O₂ oxidation. The UV-O₂ oxidation technology is very useful for the production of future devices which require low-temperature processing.

Original language	English
Pages (from-to)	1122-1124
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	3 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.37.1122
Publication status	Published - 1998 Mar
Externally published	Yes

Keywords

Hole trap
Low temperature oxidation
Silicon dioxide
Stress induced leakage current
Time dependent dielectric breakdown
Ultraviolet rays

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.37.1122

Cite this

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title = "Highly reliable SiO2 films formed by UV-O2 oxidation",

abstract = "We have developed and evaluated SiO2 films formed in a dry oxygen ambient at 600-900°C under ultraviolet irradiation (UV-O2 oxidation). It has been found that the constant current time-dependent-dielectric-breakdown (TDDB), stress induced leakage current and the hole-trapping characteristics of SiO2 films formed by the UV-O2 oxidation at 900°C, are superior to those formed by the conventional dry oxidation. The TDDB lifetime of the SiO2 films formed by the UV-O2 oxidation at 600°C is also longer than that formed by the conventional dry oxidation at 900°C and wet oxidation at 600°C. These facts indicate that the highly reliable gate oxide is realized by the UV-O2 oxidation. The UV-O2 oxidation technology is very useful for the production of future devices which require low-temperature processing.",

keywords = "Hole trap, Low temperature oxidation, Silicon dioxide, Stress induced leakage current, Time dependent dielectric breakdown, Ultraviolet rays",

author = "Akinobu Teramoto and Kiyoteru Kobayashi and Yoshikazu Ohno and Makoto Hirayama",

year = "1998",

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T1 - Highly reliable SiO2 films formed by UV-O2 oxidation

AU - Teramoto, Akinobu

AU - Kobayashi, Kiyoteru

AU - Ohno, Yoshikazu

AU - Hirayama, Makoto

PY - 1998/3

Y1 - 1998/3

N2 - We have developed and evaluated SiO2 films formed in a dry oxygen ambient at 600-900°C under ultraviolet irradiation (UV-O2 oxidation). It has been found that the constant current time-dependent-dielectric-breakdown (TDDB), stress induced leakage current and the hole-trapping characteristics of SiO2 films formed by the UV-O2 oxidation at 900°C, are superior to those formed by the conventional dry oxidation. The TDDB lifetime of the SiO2 films formed by the UV-O2 oxidation at 600°C is also longer than that formed by the conventional dry oxidation at 900°C and wet oxidation at 600°C. These facts indicate that the highly reliable gate oxide is realized by the UV-O2 oxidation. The UV-O2 oxidation technology is very useful for the production of future devices which require low-temperature processing.

AB - We have developed and evaluated SiO2 films formed in a dry oxygen ambient at 600-900°C under ultraviolet irradiation (UV-O2 oxidation). It has been found that the constant current time-dependent-dielectric-breakdown (TDDB), stress induced leakage current and the hole-trapping characteristics of SiO2 films formed by the UV-O2 oxidation at 900°C, are superior to those formed by the conventional dry oxidation. The TDDB lifetime of the SiO2 films formed by the UV-O2 oxidation at 600°C is also longer than that formed by the conventional dry oxidation at 900°C and wet oxidation at 600°C. These facts indicate that the highly reliable gate oxide is realized by the UV-O2 oxidation. The UV-O2 oxidation technology is very useful for the production of future devices which require low-temperature processing.

KW - Hole trap

KW - Low temperature oxidation

KW - Silicon dioxide

KW - Stress induced leakage current

KW - Time dependent dielectric breakdown

KW - Ultraviolet rays

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