Highly reliable SiO2 films formed by UV-O2 oxidation

Akinobu Teramoto; Kiyoteru Kobayashi; Yoshikazu Ohno; Makoto Hirayama

doi:10.1143/jjap.37.1122

Highly reliable SiO₂ films formed by UV-O₂ oxidation

Akinobu Teramoto, Kiyoteru Kobayashi, Yoshikazu Ohno, Makoto Hirayama

New Industry Creation Hatchery Center (NICHe)

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We have developed and evaluated SiO₂ films formed in a dry oxygen ambient at 600-900°C under ultraviolet irradiation (UV-O₂ oxidation). It has been found that the constant current time-dependent-dielectric-breakdown (TDDB), stress induced leakage current and the hole-trapping characteristics of SiO₂ films formed by the UV-O₂ oxidation at 900°C, are superior to those formed by the conventional dry oxidation. The TDDB lifetime of the SiO₂ films formed by the UV-O₂ oxidation at 600°C is also longer than that formed by the conventional dry oxidation at 900°C and wet oxidation at 600°C. These facts indicate that the highly reliable gate oxide is realized by the UV-O₂ oxidation. The UV-O₂ oxidation technology is very useful for the production of future devices which require low-temperature processing.

Original language	English
Pages (from-to)	1122-1124
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	37
Issue number	3 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.37.1122
Publication status	Published - 1998 Mar

Keywords

Hole trap
Low temperature oxidation
Silicon dioxide
Stress induced leakage current
Time dependent dielectric breakdown
Ultraviolet rays

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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title = "Highly reliable SiO2 films formed by UV-O2 oxidation",

abstract = "We have developed and evaluated SiO2 films formed in a dry oxygen ambient at 600-900°C under ultraviolet irradiation (UV-O2 oxidation). It has been found that the constant current time-dependent-dielectric-breakdown (TDDB), stress induced leakage current and the hole-trapping characteristics of SiO2 films formed by the UV-O2 oxidation at 900°C, are superior to those formed by the conventional dry oxidation. The TDDB lifetime of the SiO2 films formed by the UV-O2 oxidation at 600°C is also longer than that formed by the conventional dry oxidation at 900°C and wet oxidation at 600°C. These facts indicate that the highly reliable gate oxide is realized by the UV-O2 oxidation. The UV-O2 oxidation technology is very useful for the production of future devices which require low-temperature processing.",

keywords = "Hole trap, Low temperature oxidation, Silicon dioxide, Stress induced leakage current, Time dependent dielectric breakdown, Ultraviolet rays",

author = "Akinobu Teramoto and Kiyoteru Kobayashi and Yoshikazu Ohno and Makoto Hirayama",

year = "1998",

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doi = "10.1143/jjap.37.1122",

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AU - Teramoto, Akinobu

AU - Kobayashi, Kiyoteru

AU - Ohno, Yoshikazu

AU - Hirayama, Makoto

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N2 - We have developed and evaluated SiO2 films formed in a dry oxygen ambient at 600-900°C under ultraviolet irradiation (UV-O2 oxidation). It has been found that the constant current time-dependent-dielectric-breakdown (TDDB), stress induced leakage current and the hole-trapping characteristics of SiO2 films formed by the UV-O2 oxidation at 900°C, are superior to those formed by the conventional dry oxidation. The TDDB lifetime of the SiO2 films formed by the UV-O2 oxidation at 600°C is also longer than that formed by the conventional dry oxidation at 900°C and wet oxidation at 600°C. These facts indicate that the highly reliable gate oxide is realized by the UV-O2 oxidation. The UV-O2 oxidation technology is very useful for the production of future devices which require low-temperature processing.

AB - We have developed and evaluated SiO2 films formed in a dry oxygen ambient at 600-900°C under ultraviolet irradiation (UV-O2 oxidation). It has been found that the constant current time-dependent-dielectric-breakdown (TDDB), stress induced leakage current and the hole-trapping characteristics of SiO2 films formed by the UV-O2 oxidation at 900°C, are superior to those formed by the conventional dry oxidation. The TDDB lifetime of the SiO2 films formed by the UV-O2 oxidation at 600°C is also longer than that formed by the conventional dry oxidation at 900°C and wet oxidation at 600°C. These facts indicate that the highly reliable gate oxide is realized by the UV-O2 oxidation. The UV-O2 oxidation technology is very useful for the production of future devices which require low-temperature processing.

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