Highly oriented growth of n-type ZnO films on p-type single crystalline diamond films and fabrication of high-quality transparent ZnO/diamond heterojunction

C. X. Wang; G. W. Yang; C. X. Gao; H. W. Liu; Y. H. Han; J. F. Luo; G. T. Zou

doi:10.1016/j.carbon.2003.10.038

Highly oriented growth of n-type ZnO films on p-type single crystalline diamond films and fabrication of high-quality transparent ZnO/diamond heterojunction

C. X. Wang, G. W. Yang, C. X. Gao, H. W. Liu, Y. H. Han, J. F. Luo, G. T. Zou

SCI - Physics

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

We present the results on the fabrication and characterization of high-quality transparent heterojunction between n-type ZnO film and p-type diamond single crystalline film on the substrate of diamond bulk single crystal. The results indicated that the current density of the fabricated p-n junction reaches 110 A/m² when the forward bias voltage is 2.5 V, and the turn-on voltage value is about 0.75 V and agreement with the expected value. Moreover, a good rectification characteristic and transparent in the visible light range was obtained in the device.

Original language	English
Pages (from-to)	317-321
Number of pages	5
Journal	Carbon
Volume	42
Issue number	2
DOIs	https://doi.org/10.1016/j.carbon.2003.10.038
Publication status	Published - 2004 Jan 19

Keywords

A. Diamond
B. Chemical vapor deposition
C. Scanning electron microscopy, X-ray diffraction
D. Electrical properties

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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@article{b5340447bf3c4bf7bdf87544b1110472,

title = "Highly oriented growth of n-type ZnO films on p-type single crystalline diamond films and fabrication of high-quality transparent ZnO/diamond heterojunction",

abstract = "We present the results on the fabrication and characterization of high-quality transparent heterojunction between n-type ZnO film and p-type diamond single crystalline film on the substrate of diamond bulk single crystal. The results indicated that the current density of the fabricated p-n junction reaches 110 A/m2 when the forward bias voltage is 2.5 V, and the turn-on voltage value is about 0.75 V and agreement with the expected value. Moreover, a good rectification characteristic and transparent in the visible light range was obtained in the device.",

keywords = "A. Diamond, B. Chemical vapor deposition, C. Scanning electron microscopy, X-ray diffraction, D. Electrical properties",

author = "Wang, {C. X.} and Yang, {G. W.} and Gao, {C. X.} and Liu, {H. W.} and Han, {Y. H.} and Luo, {J. F.} and Zou, {G. T.}",

year = "2004",

month = jan,

day = "19",

doi = "10.1016/j.carbon.2003.10.038",

language = "English",

volume = "42",

pages = "317--321",

journal = "Carbon",

issn = "0008-6223",

publisher = "Elsevier Limited",

number = "2",

}

TY - JOUR

T1 - Highly oriented growth of n-type ZnO films on p-type single crystalline diamond films and fabrication of high-quality transparent ZnO/diamond heterojunction

AU - Wang, C. X.

AU - Yang, G. W.

AU - Gao, C. X.

AU - Liu, H. W.

AU - Han, Y. H.

AU - Luo, J. F.

AU - Zou, G. T.

PY - 2004/1/19

Y1 - 2004/1/19

N2 - We present the results on the fabrication and characterization of high-quality transparent heterojunction between n-type ZnO film and p-type diamond single crystalline film on the substrate of diamond bulk single crystal. The results indicated that the current density of the fabricated p-n junction reaches 110 A/m2 when the forward bias voltage is 2.5 V, and the turn-on voltage value is about 0.75 V and agreement with the expected value. Moreover, a good rectification characteristic and transparent in the visible light range was obtained in the device.

AB - We present the results on the fabrication and characterization of high-quality transparent heterojunction between n-type ZnO film and p-type diamond single crystalline film on the substrate of diamond bulk single crystal. The results indicated that the current density of the fabricated p-n junction reaches 110 A/m2 when the forward bias voltage is 2.5 V, and the turn-on voltage value is about 0.75 V and agreement with the expected value. Moreover, a good rectification characteristic and transparent in the visible light range was obtained in the device.

KW - A. Diamond

KW - B. Chemical vapor deposition

KW - C. Scanning electron microscopy, X-ray diffraction

KW - D. Electrical properties

UR - http://www.scopus.com/inward/record.url?scp=0347600320&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0347600320&partnerID=8YFLogxK

U2 - 10.1016/j.carbon.2003.10.038

DO - 10.1016/j.carbon.2003.10.038

M3 - Article

AN - SCOPUS:0347600320

VL - 42

SP - 317

EP - 321

JO - Carbon

JF - Carbon

SN - 0008-6223

IS - 2

ER -