Highly oriented growth of n-type ZnO films on p-type single crystalline diamond films and fabrication of high-quality transparent ZnO/diamond heterojunction

C. X. Wang, G. W. Yang, C. X. Gao, H. W. Liu, Y. H. Han, J. F. Luo, G. T. Zou

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

We present the results on the fabrication and characterization of high-quality transparent heterojunction between n-type ZnO film and p-type diamond single crystalline film on the substrate of diamond bulk single crystal. The results indicated that the current density of the fabricated p-n junction reaches 110 A/m2 when the forward bias voltage is 2.5 V, and the turn-on voltage value is about 0.75 V and agreement with the expected value. Moreover, a good rectification characteristic and transparent in the visible light range was obtained in the device.

Original languageEnglish
Pages (from-to)317-321
Number of pages5
JournalCarbon
Volume42
Issue number2
DOIs
Publication statusPublished - 2004 Jan 19

Keywords

  • A. Diamond
  • B. Chemical vapor deposition
  • C. Scanning electron microscopy, X-ray diffraction
  • D. Electrical properties

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)

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