Abstract
We present the results on the fabrication and characterization of high-quality transparent heterojunction between n-type ZnO film and p-type diamond single crystalline film on the substrate of diamond bulk single crystal. The results indicated that the current density of the fabricated p-n junction reaches 110 A/m2 when the forward bias voltage is 2.5 V, and the turn-on voltage value is about 0.75 V and agreement with the expected value. Moreover, a good rectification characteristic and transparent in the visible light range was obtained in the device.
Original language | English |
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Pages (from-to) | 317-321 |
Number of pages | 5 |
Journal | Carbon |
Volume | 42 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2004 Jan 19 |
Keywords
- A. Diamond
- B. Chemical vapor deposition
- C. Scanning electron microscopy, X-ray diffraction
- D. Electrical properties
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)