Highly Oriented and Stress Modified Thick AlN Films Deposited on Low Thermal Expansion Alloy Substrates for Flexible Electronics in Harsh Environment

N. Moriwaki, L. V. Minh, H. Kuwano

Research output: Contribution to journalConference articlepeer-review

Abstract

Highly oriented and stress-modified thick aluminium nitride (AlN) films were deposited by reactive AC magnetron sputtering on 4 inch substrates and foils made of the low thermal expansion alloy "42Alloy" for flexible electronics in harsh environment. As a result of modification of film depositing conditions for reducing residual stress, a flat three micrometer thick AlN film was deposited successfully on the 50 μm thick 42Alloy foil, and its full width at half maximum of AlN(002) was 5.00 degree. And, it was confirmed that the AlN films on 42Alloy foils have piezoelectricity by measurement of a tip displacement of the cantilever-shape test structure.

Original languageEnglish
Article number012109
JournalJournal of Physics: Conference Series
Volume1407
Issue number1
DOIs
Publication statusPublished - 2019 Dec 4
Event18th International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications, PowerMEMS 2018 - Daytona Beach, United States
Duration: 2018 Dec 42018 Dec 7

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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