Highly manufacturable 0.18 um generation LOGIC technology

Shuji Ikeda, Y. Yoshida, K. Shoji, K. Kuroda, K. Komori, N. Suzuki, K. Okuyama, S. Kamohara, N. Ishitsuka, H. Miura, E. Murakami, T. Yamanaka

Research output: Contribution to journalConference article

5 Citations (Scopus)

Abstract

A 0.18 um generation logic technology has been developed with 0.14 um gate length transistors. Guidelines to suppress mechanical stress in Shallow Trench Isolation are clearly described. Stable Co salicide process has been integrated with the combination of NO treated gate oxide and BF2 source drain ion implantation. Amorphous Si with RTA is key to control grain size and suppress large variation of drain current in small size transistors. Two kinds of metallization systems, aluminum with SiOF dielectrics and dual damascene Cu are developed in same layout rule.

Original languageEnglish
Pages (from-to)675-678
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1999 Dec 1
Externally publishedYes
Event1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA
Duration: 1999 Dec 51999 Dec 8

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Ikeda, S., Yoshida, Y., Shoji, K., Kuroda, K., Komori, K., Suzuki, N., Okuyama, K., Kamohara, S., Ishitsuka, N., Miura, H., Murakami, E., & Yamanaka, T. (1999). Highly manufacturable 0.18 um generation LOGIC technology. Technical Digest - International Electron Devices Meeting, 675-678.