Highly enhanced charge injection in thienoacene-based organic field-effect transistors with chemically doped contact

Takeo Minari, Peter Darmawan, Chuan Liu, Yun Li, Yong Xu, Kazuhito Tsukagoshi

Research output: Contribution to journalArticlepeer-review

98 Citations (Scopus)

Abstract

We describe the mechanism of contact resistance reduction and improvement in device performance of organic field-effect transistors by chemical doping at the contact interface. Insertion of iron(III)trichloride into the contact interface significantly reduced the contact resistance from 200 to 8.8 k π cm at a gate voltage of -40 V, and a field-effect mobility of 7.0 cm 2/V s was achieved in devices based on dioctylbenzothienobenzothiophene. The improved charge injection is attributable to a reduction in the depletion layer thickness at the contact interface and occupation of trap states in the access region due to the generation of charge carriers by contact doping.

Original languageEnglish
Article number093303
JournalApplied Physics Letters
Volume100
Issue number9
DOIs
Publication statusPublished - 2012 Feb 27
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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