Highly efficient piezoelectric micro-energy harvesters with AlN thin films grown directly on flexible Ti foils

Van Minh Le; Hiroki Kuwano

doi:10.1109/MEMSYS.2017.7863537

Highly efficient piezoelectric micro-energy harvesters with AlN thin films grown directly on flexible Ti foils

Van Minh Le, Hiroki Kuwano

New Industry Creation Hatchery Center (NICHe)

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

This work presents the highly efficient, micromachined energy harvester using lead-free piezoelectric AlN thin films grown directly on Ti foils for the first time. 4-μm AlN films with (002)-preferred orientation were grown on 50-μm Ti foils by an AC reactive magnetron sputter with Ar/N₂ gas and Al target. The rocking curve full width at half maximum (FWHM) of the (002)-AlN peak was 2.3°, being comparable with that of polycrystalline AlN thin films grown on Si substrates. Highly (002)-oriented AlN films on Ti foils contributed to the excellent properties - normalized piezoelectric coefficient, e_{33, eff}/e_{33, crystal-AlN} of 99.92 %, relative permittivity, ϵ_r of 9.36. AlN/Ti-based micro-energy harvesters with the cantilever and the proof mass were fabricated and achieved the high normalized power density (NPD) of 1.45 mW.g^-2.cm^-3. It is the best ever published performance for the environment-friendly energy harvesters developed from metallic substrates.

Original language	English
Title of host publication	2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	833-836
Number of pages	4
ISBN (Electronic)	9781509050789
DOIs	https://doi.org/10.1109/MEMSYS.2017.7863537
Publication status	Published - 2017 Feb 23
Event	30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017 - Las Vegas, United States Duration: 2017 Jan 22 → 2017 Jan 26

Other

Other	30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017
Country/Territory	United States
City	Las Vegas
Period	17/1/22 → 17/1/26

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/MEMSYS.2017.7863537

Cite this

Highly efficient piezoelectric micro-energy harvesters with AlN thin films grown directly on flexible Ti foils. / Le, Van Minh ; Kuwano, Hiroki.

2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 833-836 7863537.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Le, VM & Kuwano, H 2017, Highly efficient piezoelectric micro-energy harvesters with AlN thin films grown directly on flexible Ti foils. in 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017., 7863537, Institute of Electrical and Electronics Engineers Inc., pp. 833-836, 30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017, Las Vegas, United States, 17/1/22. https://doi.org/10.1109/MEMSYS.2017.7863537

@inproceedings{aef88297562f4ed2aa453dc0fc33627e,

title = "Highly efficient piezoelectric micro-energy harvesters with AlN thin films grown directly on flexible Ti foils",

abstract = "This work presents the highly efficient, micromachined energy harvester using lead-free piezoelectric AlN thin films grown directly on Ti foils for the first time. 4-μm AlN films with (002)-preferred orientation were grown on 50-μm Ti foils by an AC reactive magnetron sputter with Ar/N2 gas and Al target. The rocking curve full width at half maximum (FWHM) of the (002)-AlN peak was 2.3°, being comparable with that of polycrystalline AlN thin films grown on Si substrates. Highly (002)-oriented AlN films on Ti foils contributed to the excellent properties - normalized piezoelectric coefficient, e33, eff/e33, crystal-AlN of 99.92 %, relative permittivity, ϵr of 9.36. AlN/Ti-based micro-energy harvesters with the cantilever and the proof mass were fabricated and achieved the high normalized power density (NPD) of 1.45 mW.g-2.cm-3. It is the best ever published performance for the environment-friendly energy harvesters developed from metallic substrates.",

author = "Le, {Van Minh} and Hiroki Kuwano",

year = "2017",

month = feb,

day = "23",

doi = "10.1109/MEMSYS.2017.7863537",

language = "English",

pages = "833--836",

booktitle = "2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017 ; Conference date: 22-01-2017 Through 26-01-2017",

}

TY - GEN

T1 - Highly efficient piezoelectric micro-energy harvesters with AlN thin films grown directly on flexible Ti foils

AU - Le, Van Minh

AU - Kuwano, Hiroki

PY - 2017/2/23

Y1 - 2017/2/23

N2 - This work presents the highly efficient, micromachined energy harvester using lead-free piezoelectric AlN thin films grown directly on Ti foils for the first time. 4-μm AlN films with (002)-preferred orientation were grown on 50-μm Ti foils by an AC reactive magnetron sputter with Ar/N2 gas and Al target. The rocking curve full width at half maximum (FWHM) of the (002)-AlN peak was 2.3°, being comparable with that of polycrystalline AlN thin films grown on Si substrates. Highly (002)-oriented AlN films on Ti foils contributed to the excellent properties - normalized piezoelectric coefficient, e33, eff/e33, crystal-AlN of 99.92 %, relative permittivity, ϵr of 9.36. AlN/Ti-based micro-energy harvesters with the cantilever and the proof mass were fabricated and achieved the high normalized power density (NPD) of 1.45 mW.g-2.cm-3. It is the best ever published performance for the environment-friendly energy harvesters developed from metallic substrates.

AB - This work presents the highly efficient, micromachined energy harvester using lead-free piezoelectric AlN thin films grown directly on Ti foils for the first time. 4-μm AlN films with (002)-preferred orientation were grown on 50-μm Ti foils by an AC reactive magnetron sputter with Ar/N2 gas and Al target. The rocking curve full width at half maximum (FWHM) of the (002)-AlN peak was 2.3°, being comparable with that of polycrystalline AlN thin films grown on Si substrates. Highly (002)-oriented AlN films on Ti foils contributed to the excellent properties - normalized piezoelectric coefficient, e33, eff/e33, crystal-AlN of 99.92 %, relative permittivity, ϵr of 9.36. AlN/Ti-based micro-energy harvesters with the cantilever and the proof mass were fabricated and achieved the high normalized power density (NPD) of 1.45 mW.g-2.cm-3. It is the best ever published performance for the environment-friendly energy harvesters developed from metallic substrates.

UR - http://www.scopus.com/inward/record.url?scp=85015736166&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85015736166&partnerID=8YFLogxK

U2 - 10.1109/MEMSYS.2017.7863537

DO - 10.1109/MEMSYS.2017.7863537

M3 - Conference contribution

AN - SCOPUS:85015736166

SP - 833

EP - 836

BT - 2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017

Y2 - 22 January 2017 through 26 January 2017

ER -

Highly efficient piezoelectric micro-energy harvesters with AlN thin films grown directly on flexible Ti foils

Abstract

Other

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this