Highly efficient piezoelectric micro-energy harvesters with AlN thin films grown directly on flexible Ti foils

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Citations (Scopus)

Abstract

This work presents the highly efficient, micromachined energy harvester using lead-free piezoelectric AlN thin films grown directly on Ti foils for the first time. 4-μm AlN films with (002)-preferred orientation were grown on 50-μm Ti foils by an AC reactive magnetron sputter with Ar/N2 gas and Al target. The rocking curve full width at half maximum (FWHM) of the (002)-AlN peak was 2.3°, being comparable with that of polycrystalline AlN thin films grown on Si substrates. Highly (002)-oriented AlN films on Ti foils contributed to the excellent properties - normalized piezoelectric coefficient, e33, eff/e33, crystal-AlN of 99.92 %, relative permittivity, ϵr of 9.36. AlN/Ti-based micro-energy harvesters with the cantilever and the proof mass were fabricated and achieved the high normalized power density (NPD) of 1.45 mW.g-2.cm-3. It is the best ever published performance for the environment-friendly energy harvesters developed from metallic substrates.

Original languageEnglish
Title of host publication2017 IEEE 30th International Conference on Micro Electro Mechanical Systems, MEMS 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages833-836
Number of pages4
ISBN (Electronic)9781509050789
DOIs
Publication statusPublished - 2017 Feb 23
Event30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017 - Las Vegas, United States
Duration: 2017 Jan 222017 Jan 26

Other

Other30th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2017
CountryUnited States
CityLas Vegas
Period17/1/2217/1/26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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