Highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 thin films on Si wafer prepared by fast cooling immediately after sputter deposition

Shinya Yoshida; Hiroaki Hanzawa; Kiyotaka Wasa; Masayoshi Esashi; Shuji Tanaka

doi:10.1109/TUFFC.2014.3069

Highly c-axis-oriented monocrystalline Pb(Zr, Ti)O₃ thin films on Si wafer prepared by fast cooling immediately after sputter deposition

Shinya Yoshida, Hiroaki Hanzawa, Kiyotaka Wasa, Masayoshi Esashi, Shuji Tanaka

ENG - Robotics

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O₃ (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr_0.5, Ti_0.5)O₃ films showed reasonably large piezoelectric coefficients, e_31,f = ~-11 C/m ², with remarkably small dielectric constants, ε_r = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.

Original language	English
Article number	6882953
Pages (from-to)	1552-1558
Number of pages	7
Journal	IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume	61
Issue number	9
DOIs	https://doi.org/10.1109/TUFFC.2014.3069
Publication status	Published - 2014 Sep

ASJC Scopus subject areas

Instrumentation
Acoustics and Ultrasonics
Electrical and Electronic Engineering

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Highly c-axis-oriented monocrystalline Pb(Zr, Ti)O₃ thin films on Si wafer prepared by fast cooling immediately after sputter deposition. / Yoshida, Shinya; Hanzawa, Hiroaki; Wasa, Kiyotaka; Esashi, Masayoshi; Tanaka, Shuji.

In: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 61, No. 9, 6882953, 09.2014, p. 1552-1558.

Research output: Contribution to journal › Article › peer-review

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abstract = "We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e31,f = ~-11 C/m 2, with remarkably small dielectric constants, εr = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.",

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AU - Esashi, Masayoshi

AU - Tanaka, Shuji

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N2 - We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e31,f = ~-11 C/m 2, with remarkably small dielectric constants, εr = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.

AB - We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e31,f = ~-11 C/m 2, with remarkably small dielectric constants, εr = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.

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Highly c-axis-oriented monocrystalline Pb(Zr, Ti)O₃ thin films on Si wafer prepared by fast cooling immediately after sputter deposition

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