Highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 thin films on Si wafer prepared by fast cooling immediately after sputter deposition

Shinya Yoshida, Hiroaki Hanzawa, Kiyotaka Wasa, Masayoshi Esashi, Shuji Tanaka

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e31,f = ~-11 C/m 2, with remarkably small dielectric constants, εr = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.

Original languageEnglish
Article number6882953
Pages (from-to)1552-1558
Number of pages7
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume61
Issue number9
DOIs
Publication statusPublished - 2014 Sep

ASJC Scopus subject areas

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering

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