TY - JOUR
T1 - Highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 thin films on Si wafer prepared by fast cooling immediately after sputter deposition
AU - Yoshida, Shinya
AU - Hanzawa, Hiroaki
AU - Wasa, Kiyotaka
AU - Esashi, Masayoshi
AU - Tanaka, Shuji
PY - 2014/9
Y1 - 2014/9
N2 - We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e31,f = ~-11 C/m 2, with remarkably small dielectric constants, εr = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.
AB - We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e31,f = ~-11 C/m 2, with remarkably small dielectric constants, εr = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.
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U2 - 10.1109/TUFFC.2014.3069
DO - 10.1109/TUFFC.2014.3069
M3 - Article
AN - SCOPUS:84906818212
VL - 61
SP - 1552
EP - 1558
JO - Transactions of the IRE Professional Group on Ultrasonic Engineering
JF - Transactions of the IRE Professional Group on Ultrasonic Engineering
SN - 0885-3010
IS - 9
M1 - 6882953
ER -