Abstract
Thin PtMn films have recently been used in magnetic devices such as magnetoresistive random access memories (MRAMs). A general problem with this material is that it is relatively inert during conventional plasma processes, and thus alternative methods such as ion milling, lift-off and electroplating have been employed for pattern transfer. As the density of magnetic memories increases toward the Gbit range, the film must be patterned at sub-micron widths. To achieve this requirement, we propose pulse-time-modulated plasma etching. We found that highly anisotropic PtMn etching could be achieved with smooth and corrosionless sidewalls using pulse-time-modulated (TM) chlorine plasma at a pulse time of 10 to 100μs. We concluded that the incident Cl - could enhance the chemical reaction on the PtMn surface.
Original language | English |
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Pages (from-to) | L1272-L1274 |
Journal | Japanese Journal of Applied Physics, Part 2: Letters |
Volume | 42 |
Issue number | 10 B |
DOIs | |
Publication status | Published - 2003 Oct 15 |
Keywords
- Magnetoresistive random access memories (MRAMs)
- Negative ions
- PtMn
- Pulse-time-modulated plasma
- Reactive ion etching (RIE)
- Spin valve materials
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)