Highly (111)-oriented SiC films on glassy carbon prepared by laser chemical vapor deposition

Ying Li; Hirokazu Katsui; Takashi Goto

doi:10.4191/kcers.2016.53.6.647

Highly (111)-oriented SiC films on glassy carbon prepared by laser chemical vapor deposition

Ying Li, Hirokazu Katsui, Takashi Goto

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of 10⁴ Pa using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature (T_dep) range of 1150 - 1422 K. At T_dep = 1262 K, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate (R_dep) was 220 µm h⁻¹ at T_dep = 1262 K.

Original language	English
Pages (from-to)	647-651
Number of pages	5
Journal	Journal of the Korean Ceramic Society
Volume	53
Issue number	6
DOIs	https://doi.org/10.4191/kcers.2016.53.6.647
Publication status	Published - 2016 Nov

Keywords

(111) orientation
Glassy substrate
High-speed growth
Laser chemical vapor deposition
SiC film

ASJC Scopus subject areas

Ceramics and Composites

Access to Document

10.4191/kcers.2016.53.6.647

Fingerprint Dive into the research topics of 'Highly (111)-oriented SiC films on glassy carbon prepared by laser chemical vapor deposition'. Together they form a unique fingerprint.

Cite this

@article{b25e5500e26e40fe845c5e7305aa1ab7,

title = "Highly (111)-oriented SiC films on glassy carbon prepared by laser chemical vapor deposition",

abstract = "SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of 104 Pa using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature (Tdep) range of 1150 - 1422 K. At Tdep = 1262 K, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate (Rdep) was 220 µm h−1 at Tdep = 1262 K.",

keywords = "(111) orientation, Glassy substrate, High-speed growth, Laser chemical vapor deposition, SiC film",

author = "Ying Li and Hirokazu Katsui and Takashi Goto",

note = "Funding Information: This research was partially supported by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) KAKENHI Grant Number 16H06121, Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development Project, Tohoku University, Japan, and the collaborative program CRDAM-IMR (16G0405), Tohoku University, Japan.",

year = "2016",

month = nov,

doi = "10.4191/kcers.2016.53.6.647",

language = "English",

volume = "53",

pages = "647--651",

journal = "Journal of the Korean Ceramic Society",

issn = "1229-7801",

publisher = "Korean Ceramic Society",

number = "6",

}

TY - JOUR

T1 - Highly (111)-oriented SiC films on glassy carbon prepared by laser chemical vapor deposition

AU - Li, Ying

AU - Katsui, Hirokazu

AU - Goto, Takashi

N1 - Funding Information: This research was partially supported by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) KAKENHI Grant Number 16H06121, Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development Project, Tohoku University, Japan, and the collaborative program CRDAM-IMR (16G0405), Tohoku University, Japan.

PY - 2016/11

Y1 - 2016/11

N2 - SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of 104 Pa using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature (Tdep) range of 1150 - 1422 K. At Tdep = 1262 K, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate (Rdep) was 220 µm h−1 at Tdep = 1262 K.

AB - SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of 104 Pa using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature (Tdep) range of 1150 - 1422 K. At Tdep = 1262 K, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate (Rdep) was 220 µm h−1 at Tdep = 1262 K.

KW - (111) orientation

KW - Glassy substrate

KW - High-speed growth

KW - Laser chemical vapor deposition

KW - SiC film

UR - http://www.scopus.com/inward/record.url?scp=85036459104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85036459104&partnerID=8YFLogxK

U2 - 10.4191/kcers.2016.53.6.647

DO - 10.4191/kcers.2016.53.6.647

M3 - Article

AN - SCOPUS:85036459104

VL - 53

SP - 647

EP - 651

JO - Journal of the Korean Ceramic Society

JF - Journal of the Korean Ceramic Society

SN - 1229-7801

IS - 6

ER -