Highly (111)-oriented SiC films on glassy carbon prepared by laser chemical vapor deposition

Ying Li, Hirokazu Katsui, Takashi Goto

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of 104 Pa using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature (Tdep) range of 1150 - 1422 K. At Tdep = 1262 K, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate (Rdep) was 220 µm h−1 at Tdep = 1262 K.

Original languageEnglish
Pages (from-to)647-651
Number of pages5
JournalJournal of the Korean Ceramic Society
Volume53
Issue number6
DOIs
Publication statusPublished - 2016 Nov

Keywords

  • (111) orientation
  • Glassy substrate
  • High-speed growth
  • Laser chemical vapor deposition
  • SiC film

ASJC Scopus subject areas

  • Ceramics and Composites

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