Abstract
SiC films were prepared on glassy carbon substrates by laser chemical vapor deposition under a high pressure of 104 Pa using a diode laser (wavelength = 808 nm) and a polysilaethylene precursor. (111)-oriented SiC films were formed at a deposition temperature (Tdep) range of 1150 - 1422 K. At Tdep = 1262 K, the SiC film with a high Lotgering factor of above 0.96 showed an exhibited pyramid-like surface morphology and flower-like grains. The highest deposition rate (Rdep) was 220 µm h−1 at Tdep = 1262 K.
Original language | English |
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Pages (from-to) | 647-651 |
Number of pages | 5 |
Journal | Journal of the Korean Ceramic Society |
Volume | 53 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2016 Nov |
Keywords
- (111) orientation
- Glassy substrate
- High-speed growth
- Laser chemical vapor deposition
- SiC film
ASJC Scopus subject areas
- Ceramics and Composites