Higher-order desorption kinetics of hydrogen from silane/, disilane/, and D/Si(100)

Hideki Nakazawa, Maki Suemitsu

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)

Abstract

Hydrogen desorption kinetics from silane/, disilane/, and D/Si(100)-2×1 surfaces with and without thermal processings have been investigated using temperature-programmed desorption (TPD) measurements. In contrast to previously reported first-order desorption kinetics from H/Si(100) surface, the kinetics became higher-order under certain conditions of hydrogenating gases and thermal processings. Specifically, the hydrogen desorption from a post-annealed, silane-saturated surface showed the highest reaction order of all the combinations. A unified explanation is given to these results using the preparing of surface hydrogen atoms at a dimer.

Original languageEnglish
Pages (from-to)298-303
Number of pages6
JournalApplied Surface Science
Volume130-132
DOIs
Publication statusPublished - 1998
EventProceedings of the 1997 4th International Symposium on Atomically Controlled Surfaces and Intefaces, ACSI-4 - Tokyo, Jpn
Duration: 1997 Oct 271997 Oct 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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