High-voltage, high-resolution electron microscopy study on thin sections of phase change optical disk prepared by an ultramicrotome

Gyeong Su Park, Hyeon Chang Hong, Jun Mo Yang, Daisuke Shindo

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Thin cross-sections of a phase change optical disk were prepared by ultramicrotomy without embedding of the resin. Transmission electron microscope images of the thin sections directly show the constitution of the phase change optical disk, that is, the coating layer (UV resin: 2.05 μm), the reflective layer (Al: 90 nm), the upper dielectric layer (ZnSμSiO2: 37 nm), the recording layer (Ge2Sb2Te5: 20 nm) and the bottom dielectric layer (ZnSSiO2: 160 nm) on the pre-grooved polycarbonate substrate. Its structure on an atomic scale is analysed by high-voltage, high-resolution electron microscopy. Moreover, it is found that the characteristic of the phase change of the optical disk is attributed to the GeTe intermetallic compound of the recording layer formed during the initializing process.

Original languageEnglish
Pages (from-to)183-190
Number of pages8
JournalJournal of Electron Microscopy
Volume48
Issue number3
DOIs
Publication statusPublished - 1999 Jan 1

Keywords

  • GeSbTe
  • GeTe intermetallic compound
  • High-resolution electron microscopy
  • Phase change optical disk
  • Recording layer
  • Ultramicrotomy

ASJC Scopus subject areas

  • Instrumentation

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