High upconversion intensity of Er3+ in a LaF3 thin film on CaF2 (111) grown by the molecular beam epitaxy method

Satoshi Uda, Kazunori Adachi, Katsuhiko Inaba, Takafumi Yao, Atsuo Kasuya, Tsuguo Fukuda

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Monocrystalline Er3+-doped LaF3 layers were heteroepitaxially grown on CaF2 (111) substrates with an Er3+ concentration of up to 38.7 mol% by molecular beam epitaxy. The hexagonal crystal structure of LaF3 was confirmed from the beginning of the layer formation by RHEED patterns. Green light emission at 538 nm was generated by upconversion employing near 800 nm pump wavelengths from a Ti:sapphire laser. The maximum emission intensity of green light was obtained at an Er3+ concentration of 11 mol%, which was several times higher than that obtained from an Er3+-doped CaF2 film on CaF2 (111). This is discussed in relation to the effect of the heavy mass of La on the emission mechanism.

Original languageEnglish
Pages (from-to)L41-L44
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number1 PART A/B
DOIs
Publication statusPublished - 1997 Jan 15

Keywords

  • 538 nm Emission
  • Concentration quenching
  • Energy transfer
  • Epitaxial growth
  • Er concentration
  • Excited state absorption
  • Lanthanum fluoride
  • Molecular beam epitaxy
  • Stark splitting
  • Upconversion

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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