High-throughput synthesis and characterization of Mg 1-x Ca x O films as a lattice and valence-matched gate dielectric for ZnO based field effect transistors

J. Nishii, A. Ohtomo, M. Ikeda, Y. Yamada, K. Ohtani, H. Ohno, M. Kawasaki

Research output: Contribution to journalConference articlepeer-review

15 Citations (Scopus)

Abstract

Using composition-spread technique, we have grown metastable Mg 1-x Ca x O solid solution films on ZnO layers by pulsed laser deposition. All the films exhibited (1 1 1) oriented cubic phase. Despite a large miscibility gap, no phase separation took place at growth temperatures up to 700 °C, whereas an optimal growth temperature was found at 400 °C in terms of the crystallinity. The composition-spread films were characterized by X-ray diffraction mapping technique. Both lattice parameters and diffraction intensity increased with increasing the CaO composition. The present isovalent heterointerfaces realized the perfect lattice-matching by properly adjusting the CaO composition, leading to particular interest for ZnO based field effect transistors.

Original languageEnglish
Pages (from-to)2507-2511
Number of pages5
JournalApplied Surface Science
Volume252
Issue number7
DOIs
Publication statusPublished - 2006 Jan 21
EventProceedings of the Third Japan-US Workshop on Combinatorial Material Science and Technology CMST-e SI -
Duration: 2004 Dec 72004 Dec 10

Keywords

  • CaO
  • Field effect transistor
  • Heterostructure
  • MgO
  • Pulsed laser deposition
  • ScAlMgO
  • Solid solution
  • ZnO

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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