High-throughput characterization of metal electrode performance for electric-field-induced resistance switching in metal/Pr0.7Ca 0.3MnO3/metal structures

Kenta Tsubouchi, Isao Ohkubo, Hiroshi Kumigashira, Masaharu Oshima, Yuji Matsumoto, Kenji Itaka, Tsuyoshi Ohnishi, Mikk Lippmaa, Hideomi Koinuma

Research output: Contribution to journalArticle

79 Citations (Scopus)

Abstract

A study was conducted to perform high-throughput electrode exploration to determine the appropriate structure of resistance-switching memory devices. Farication of several types of metal electrodes on an epitaxial Pr 0Ca0.3MnO3 (PCMO) layer and I-V characterization of electrode pairs were carried out, using combinatorial methodology. The methodology ensured a rapid screening of the resistance-switching effect from many combinations of different materials. Epitaxial PCMO thin films were grown on LaAlO3(100) (LAO) single crystal substrates by pulsed laser deposition (PLD). Growth of the epitaxial PCMO thin film was confirmed by four-circle X-ray diffraction (4cXRD) measurements. Detailed analysis of the 4cXRD pattern revealed that the PCMO thin film was compressively strained on the LAO substrate.

Original languageEnglish
Pages (from-to)1711-1713
Number of pages3
JournalAdvanced Materials
Volume19
Issue number13
DOIs
Publication statusPublished - 2007 Jul 2
Externally publishedYes

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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