High-Thermoresistant Temporary Bonding Technology for Multichip-to-Wafer 3-D Integration with Via-Last TSVs

Hideto Hashiguchi, Takafumi Fukushima, Mariappan Murugesan, Hisashi Kino, Tetsu Tanaka, Mitsumasa Koyanagi

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

In this paper, a high-thermoresistant temporary bonding/debonding system using spin-on glass (SOG) and hydrogenated amorphous silicon layers is proposed for the multichip-to-wafer (MCtW) 3-D integration based on a via-last/backside-via through-silicon via (TSV) approach. The shear strengths of chips bonded to wafers through the SOG layers are evaluated. In addition, the debonding performance of the chips from the wafers is investigated by using the KrF excimer laser irradiation. Finally, a via-last/backside-via MCtW 3-D integration process using the temporary bonding/debonding system is demonstrated to show the high feasibility with the successful interconnect formation of a Cu-TSVs daisy chain (10 μ m in diameter and 50 μ m in depth) with a SiO2 liner dielectric deposited by O3-tetraethylorthosilicate chemical vapor deposition at 350 °C.

Original languageEnglish
Article number8470177
Pages (from-to)181-188
Number of pages8
JournalIEEE Transactions on Components, Packaging and Manufacturing Technology
Volume9
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1

Keywords

  • 3-D integration
  • multichip-to-wafer (MCtW) stacking
  • temporary bonding/debonding
  • thermally stable adhesive
  • via-last through-silicon via (TSV)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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