High-thermal-stability resistor formed from manganese nitride compound that exhibits the saturation state of the mean free path

Research output: Contribution to journalArticlepeer-review

Abstract

Antiperovskite manganese nitride compounds possess the saturation characteristics of the mean free path at an approximate room temperature. Therefore, such compounds show a flat resistance-temperature curve at an approximate room temperature. In this paper, we propose a manganese nitride resistor for high-thermal-stability systems. We fabricated and evaluated the micro/nanoscale manganese nitride compound resistors using the complementary metal-oxide-semiconductor-compatible process. The thermal coefficient of the fabricated manganese nitride compound resistor was as low as that of other near-zero temperature-coefficient of resistivity materials. These results indicate that manganese nitride compounds can achieve higher thermal stability.

Original languageEnglish
Article number091003
JournalApplied Physics Express
Volume14
Issue number9
DOIs
Publication statusPublished - 2021 Sep

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint

Dive into the research topics of 'High-thermal-stability resistor formed from manganese nitride compound that exhibits the saturation state of the mean free path'. Together they form a unique fingerprint.

Cite this