TY - JOUR
T1 - High-thermal-stability resistor formed from manganese nitride compound that exhibits the saturation state of the mean free path
AU - Kino, Hisashi
AU - Fukushima, Takafumi
AU - Tanaka, Tetsu
N1 - Funding Information:
This work was supported by JSPS KAKENHI under grant number 20H02193 and the Frontier Research Institute for Interdisciplinary Sciences (FRIS) at Tohoku University, and through the activities of VDEC, The University of Tokyo, in collaboration with Cadence Design Systems. The work was performed in the Micro/Nano-Machining Research and Education Center at Tohoku University.
Publisher Copyright:
© 2021 The Japan Society of Applied Physics.
PY - 2021/9
Y1 - 2021/9
N2 - Antiperovskite manganese nitride compounds possess the saturation characteristics of the mean free path at an approximate room temperature. Therefore, such compounds show a flat resistance-temperature curve at an approximate room temperature. In this paper, we propose a manganese nitride resistor for high-thermal-stability systems. We fabricated and evaluated the micro/nanoscale manganese nitride compound resistors using the complementary metal-oxide-semiconductor-compatible process. The thermal coefficient of the fabricated manganese nitride compound resistor was as low as that of other near-zero temperature-coefficient of resistivity materials. These results indicate that manganese nitride compounds can achieve higher thermal stability.
AB - Antiperovskite manganese nitride compounds possess the saturation characteristics of the mean free path at an approximate room temperature. Therefore, such compounds show a flat resistance-temperature curve at an approximate room temperature. In this paper, we propose a manganese nitride resistor for high-thermal-stability systems. We fabricated and evaluated the micro/nanoscale manganese nitride compound resistors using the complementary metal-oxide-semiconductor-compatible process. The thermal coefficient of the fabricated manganese nitride compound resistor was as low as that of other near-zero temperature-coefficient of resistivity materials. These results indicate that manganese nitride compounds can achieve higher thermal stability.
UR - http://www.scopus.com/inward/record.url?scp=85113715316&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85113715316&partnerID=8YFLogxK
U2 - 10.35848/1882-0786/ac18b0
DO - 10.35848/1882-0786/ac18b0
M3 - Article
AN - SCOPUS:85113715316
VL - 14
JO - Applied Physics Express
JF - Applied Physics Express
SN - 1882-0778
IS - 9
M1 - 091003
ER -