High temperature transport property of B- and P-doped GeSi single crystals prepared by a Czochralski method

T. Akashi, I. Yonenaga, I. Gunjishima, T. Goto

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

B-doped (p-type) and P-doped (n-type) Ge0.07Si0.93 single crystals were prepared by a Czochralski (CZ) method. The anisotropy of Seebeck coefficient (α), electrical conductivity (σ) and thermal conductivity (κ) among the [001], [110] and [111] directions was determined and the values were compared with those of polycrystalline materials. The Seebeck coefficient of B-doped specimen in the [111] direction (α111) was the same as that in the [110] direction (α110), and was greater than that in the [001] direction (α001) measured at all temperature. The α111, α110 and α100 of the P-doped specimens were in agreement above 600 K, but anisotropy of α values was observed below 500 K, (|α001| > |α111| > |α110|). No anisotropy of σ and κ was observed in both B- and P-doped specimens. The thermal conduc tivity of B- and P-doped single crystal specimens were much greater than that of polycrystalline materials.

Original languageEnglish
Pages (from-to)1024-1027
Number of pages4
JournalMaterials Transactions
Volume42
Issue number6
DOIs
Publication statusPublished - 2001

Keywords

  • Anisotropy
  • Carrier mobility
  • Electrical conductivity
  • Germanium-silicon
  • Seebeck coefficient
  • Single crystal
  • Thermal conductivity

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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