High temperature transport properties at metal/SrTiO3 interfaces

Tatsuya Kawada; Naofumi Iizawa; Michihisa Tomida; Atsushi Kaimai; Ken Ichi Kawamura; Yutaka Nigara; Junichiro Mizusaki

doi:10.1016/s0955-2219(98)00297-0

High temperature transport properties at metal/SrTiO₃ interfaces

Tatsuya Kawada, Naofumi Iizawa, Michihisa Tomida, Atsushi Kaimai, Ken Ichi Kawamura, Yutaka Nigara, Junichiro Mizusaki

ENV - Environmental Studies for Advanced Society

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

High temperature current-voltage characteristics were investigated with a Nb doped SrTiO₃ (Nb-STO) single crystal. The conductivity of the 0·5wt% Nb doped SrTiO₃ showed high n-type conductivity with a negative temperature coefficient. The Pt/Nb-STO interface freshly prepared by laser ablation at 973K in high vacuum condition showed ohmic behavior. However, it turned to show a Schottky type non linearity when annealed in oxygen gas at temperatures higher than 773K. The I-V curve in the forward direction was well fitted with the equation based on the thermionic emission model. At high temperatures, the I-V behavior was dependent on the oxygen partial pressure. The lower oxygen partial pressure resulted in a lower barrier height. The change in the I-V curve with oxygen potential was almost reversible at 873K, and was frozen below 673K. Those phenomena suggested that the Schottky barrier formation at the Pt/STO interface has a strong relation with the oxygen transport in Nb-STO.

Original language	English
Pages (from-to)	687-691
Number of pages	5
Journal	Journal of the European Ceramic Society
Volume	19
Issue number	6-7
DOIs	https://doi.org/10.1016/s0955-2219(98)00297-0
Publication status	Published - 1999 Jun

Keywords

Electrical properties.
Interfaces
SrTiO

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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@article{d4569945e6714818a925083cdf7d82dc,

title = "High temperature transport properties at metal/SrTiO3 interfaces",

abstract = "High temperature current-voltage characteristics were investigated with a Nb doped SrTiO3 (Nb-STO) single crystal. The conductivity of the 0·5wt% Nb doped SrTiO3 showed high n-type conductivity with a negative temperature coefficient. The Pt/Nb-STO interface freshly prepared by laser ablation at 973K in high vacuum condition showed ohmic behavior. However, it turned to show a Schottky type non linearity when annealed in oxygen gas at temperatures higher than 773K. The I-V curve in the forward direction was well fitted with the equation based on the thermionic emission model. At high temperatures, the I-V behavior was dependent on the oxygen partial pressure. The lower oxygen partial pressure resulted in a lower barrier height. The change in the I-V curve with oxygen potential was almost reversible at 873K, and was frozen below 673K. Those phenomena suggested that the Schottky barrier formation at the Pt/STO interface has a strong relation with the oxygen transport in Nb-STO.",

keywords = "Electrical properties., Interfaces, SrTiO",

author = "Tatsuya Kawada and Naofumi Iizawa and Michihisa Tomida and Atsushi Kaimai and Kawamura, {Ken Ichi} and Yutaka Nigara and Junichiro Mizusaki",

year = "1999",

month = jun,

doi = "10.1016/s0955-2219(98)00297-0",

language = "English",

volume = "19",

pages = "687--691",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier BV",

number = "6-7",

}

TY - JOUR

T1 - High temperature transport properties at metal/SrTiO3 interfaces

AU - Kawada, Tatsuya

AU - Iizawa, Naofumi

AU - Tomida, Michihisa

AU - Kaimai, Atsushi

AU - Kawamura, Ken Ichi

AU - Nigara, Yutaka

AU - Mizusaki, Junichiro

PY - 1999/6

Y1 - 1999/6

N2 - High temperature current-voltage characteristics were investigated with a Nb doped SrTiO3 (Nb-STO) single crystal. The conductivity of the 0·5wt% Nb doped SrTiO3 showed high n-type conductivity with a negative temperature coefficient. The Pt/Nb-STO interface freshly prepared by laser ablation at 973K in high vacuum condition showed ohmic behavior. However, it turned to show a Schottky type non linearity when annealed in oxygen gas at temperatures higher than 773K. The I-V curve in the forward direction was well fitted with the equation based on the thermionic emission model. At high temperatures, the I-V behavior was dependent on the oxygen partial pressure. The lower oxygen partial pressure resulted in a lower barrier height. The change in the I-V curve with oxygen potential was almost reversible at 873K, and was frozen below 673K. Those phenomena suggested that the Schottky barrier formation at the Pt/STO interface has a strong relation with the oxygen transport in Nb-STO.

AB - High temperature current-voltage characteristics were investigated with a Nb doped SrTiO3 (Nb-STO) single crystal. The conductivity of the 0·5wt% Nb doped SrTiO3 showed high n-type conductivity with a negative temperature coefficient. The Pt/Nb-STO interface freshly prepared by laser ablation at 973K in high vacuum condition showed ohmic behavior. However, it turned to show a Schottky type non linearity when annealed in oxygen gas at temperatures higher than 773K. The I-V curve in the forward direction was well fitted with the equation based on the thermionic emission model. At high temperatures, the I-V behavior was dependent on the oxygen partial pressure. The lower oxygen partial pressure resulted in a lower barrier height. The change in the I-V curve with oxygen potential was almost reversible at 873K, and was frozen below 673K. Those phenomena suggested that the Schottky barrier formation at the Pt/STO interface has a strong relation with the oxygen transport in Nb-STO.

KW - Electrical properties.

KW - Interfaces

KW - SrTiO

UR - http://www.scopus.com/inward/record.url?scp=0032634949&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032634949&partnerID=8YFLogxK

U2 - 10.1016/s0955-2219(98)00297-0

DO - 10.1016/s0955-2219(98)00297-0

M3 - Article

AN - SCOPUS:0032634949

VL - 19

SP - 687

EP - 691

JO - Journal of the European Ceramic Society

JF - Journal of the European Ceramic Society

SN - 0955-2219

IS - 6-7

ER -