High temperature transport properties at metal/SrTiO3 interfaces

Tatsuya Kawada; Naofumi Iizawa; Michihisa Tomida; Atsushi Kaimai; Ken Ichi Kawamura; Yutaka Nigara; Junichiro Mizusaki

doi:10.1016/s0955-2219(98)00297-0

High temperature transport properties at metal/SrTiO₃ interfaces

Tatsuya Kawada, Naofumi Iizawa, Michihisa Tomida, Atsushi Kaimai, Ken Ichi Kawamura, Yutaka Nigara, Junichiro Mizusaki

ENV - Environmental Studies for Advanced Society

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

High temperature current-voltage characteristics were investigated with a Nb doped SrTiO₃ (Nb-STO) single crystal. The conductivity of the 0·5wt% Nb doped SrTiO₃ showed high n-type conductivity with a negative temperature coefficient. The Pt/Nb-STO interface freshly prepared by laser ablation at 973K in high vacuum condition showed ohmic behavior. However, it turned to show a Schottky type non linearity when annealed in oxygen gas at temperatures higher than 773K. The I-V curve in the forward direction was well fitted with the equation based on the thermionic emission model. At high temperatures, the I-V behavior was dependent on the oxygen partial pressure. The lower oxygen partial pressure resulted in a lower barrier height. The change in the I-V curve with oxygen potential was almost reversible at 873K, and was frozen below 673K. Those phenomena suggested that the Schottky barrier formation at the Pt/STO interface has a strong relation with the oxygen transport in Nb-STO.

Original language	English
Pages (from-to)	687-691
Number of pages	5
Journal	Journal of the European Ceramic Society
Volume	19
Issue number	6-7
DOIs	https://doi.org/10.1016/s0955-2219(98)00297-0
Publication status	Published - 1999 Jun

Keywords

Electrical properties.
Interfaces
SrTiO

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

Access to Document

10.1016/s0955-2219(98)00297-0

Cite this

@article{d4569945e6714818a925083cdf7d82dc,

title = "High temperature transport properties at metal/SrTiO3 interfaces",

abstract = "High temperature current-voltage characteristics were investigated with a Nb doped SrTiO3 (Nb-STO) single crystal. The conductivity of the 0·5wt% Nb doped SrTiO3 showed high n-type conductivity with a negative temperature coefficient. The Pt/Nb-STO interface freshly prepared by laser ablation at 973K in high vacuum condition showed ohmic behavior. However, it turned to show a Schottky type non linearity when annealed in oxygen gas at temperatures higher than 773K. The I-V curve in the forward direction was well fitted with the equation based on the thermionic emission model. At high temperatures, the I-V behavior was dependent on the oxygen partial pressure. The lower oxygen partial pressure resulted in a lower barrier height. The change in the I-V curve with oxygen potential was almost reversible at 873K, and was frozen below 673K. Those phenomena suggested that the Schottky barrier formation at the Pt/STO interface has a strong relation with the oxygen transport in Nb-STO.",

keywords = "Electrical properties., Interfaces, SrTiO",

author = "Tatsuya Kawada and Naofumi Iizawa and Michihisa Tomida and Atsushi Kaimai and Kawamura, {Ken Ichi} and Yutaka Nigara and Junichiro Mizusaki",

note = "Funding Information: The authors would like to thank Professor Yugami, Dr Naito, and Mr Iguchi in Tohoku University for performing laser ablation experiments. This work was performed through Special Coordination Funds of Science and Technology Agency of Japan. It was partly supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture.",

year = "1999",

month = jun,

doi = "10.1016/s0955-2219(98)00297-0",

language = "English",

volume = "19",

pages = "687--691",

journal = "Journal of the European Ceramic Society",

issn = "0955-2219",

publisher = "Elsevier BV",

number = "6-7",

}

TY - JOUR

T1 - High temperature transport properties at metal/SrTiO3 interfaces

AU - Kawada, Tatsuya

AU - Iizawa, Naofumi

AU - Tomida, Michihisa

AU - Kaimai, Atsushi

AU - Kawamura, Ken Ichi

AU - Nigara, Yutaka

AU - Mizusaki, Junichiro

N1 - Funding Information: The authors would like to thank Professor Yugami, Dr Naito, and Mr Iguchi in Tohoku University for performing laser ablation experiments. This work was performed through Special Coordination Funds of Science and Technology Agency of Japan. It was partly supported by the Grant-in-Aid for Scientific Research from the Ministry of Education, Science and Culture.

PY - 1999/6

Y1 - 1999/6

N2 - High temperature current-voltage characteristics were investigated with a Nb doped SrTiO3 (Nb-STO) single crystal. The conductivity of the 0·5wt% Nb doped SrTiO3 showed high n-type conductivity with a negative temperature coefficient. The Pt/Nb-STO interface freshly prepared by laser ablation at 973K in high vacuum condition showed ohmic behavior. However, it turned to show a Schottky type non linearity when annealed in oxygen gas at temperatures higher than 773K. The I-V curve in the forward direction was well fitted with the equation based on the thermionic emission model. At high temperatures, the I-V behavior was dependent on the oxygen partial pressure. The lower oxygen partial pressure resulted in a lower barrier height. The change in the I-V curve with oxygen potential was almost reversible at 873K, and was frozen below 673K. Those phenomena suggested that the Schottky barrier formation at the Pt/STO interface has a strong relation with the oxygen transport in Nb-STO.

AB - High temperature current-voltage characteristics were investigated with a Nb doped SrTiO3 (Nb-STO) single crystal. The conductivity of the 0·5wt% Nb doped SrTiO3 showed high n-type conductivity with a negative temperature coefficient. The Pt/Nb-STO interface freshly prepared by laser ablation at 973K in high vacuum condition showed ohmic behavior. However, it turned to show a Schottky type non linearity when annealed in oxygen gas at temperatures higher than 773K. The I-V curve in the forward direction was well fitted with the equation based on the thermionic emission model. At high temperatures, the I-V behavior was dependent on the oxygen partial pressure. The lower oxygen partial pressure resulted in a lower barrier height. The change in the I-V curve with oxygen potential was almost reversible at 873K, and was frozen below 673K. Those phenomena suggested that the Schottky barrier formation at the Pt/STO interface has a strong relation with the oxygen transport in Nb-STO.

KW - Electrical properties.

KW - Interfaces

KW - SrTiO

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