Abstract
High temperature current-voltage characteristics were investigated with a Nb doped SrTiO3 (Nb-STO) single crystal. The conductivity of the 0·5wt% Nb doped SrTiO3 showed high n-type conductivity with a negative temperature coefficient. The Pt/Nb-STO interface freshly prepared by laser ablation at 973K in high vacuum condition showed ohmic behavior. However, it turned to show a Schottky type non linearity when annealed in oxygen gas at temperatures higher than 773K. The I-V curve in the forward direction was well fitted with the equation based on the thermionic emission model. At high temperatures, the I-V behavior was dependent on the oxygen partial pressure. The lower oxygen partial pressure resulted in a lower barrier height. The change in the I-V curve with oxygen potential was almost reversible at 873K, and was frozen below 673K. Those phenomena suggested that the Schottky barrier formation at the Pt/STO interface has a strong relation with the oxygen transport in Nb-STO.
Original language | English |
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Pages (from-to) | 687-691 |
Number of pages | 5 |
Journal | Journal of the European Ceramic Society |
Volume | 19 |
Issue number | 6-7 |
DOIs | |
Publication status | Published - 1999 Jun |
Keywords
- Electrical properties.
- Interfaces
- SrTiO
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry