The mechanical strength of bulk single crystal wurtzite ZnO was investigated at elevated temperatures by means of compressive deformation. The yield stress of ZnO in the temperature range of 650-850 °C was found to be around 10-20 MPa, i.e., extremely lower than that of GaN, a typical wide band-gap semiconductor. On the basis of the observed temperature dependence of yield stress, the activation energy for dislocation motion at elevated temperatures in ZnO is deduced to be 0.7-1.2 eV, which follows the relation of activation energy for dislocation motion versus band-gap energy known in a variety of semiconductors.
ASJC Scopus subject areas
- Physics and Astronomy(all)