TY - JOUR
T1 - High-temperature strength and dislocation mobility in the wide band-gap ZnO
T2 - Comparison with various semiconductors
AU - Yonenaga, Ichiro
AU - Koizumi, Haruhiko
AU - Ohno, Yutaka
AU - Taishi, T.
PY - 2008/5/26
Y1 - 2008/5/26
N2 - The mechanical strength of bulk single crystal wurtzite ZnO was investigated at elevated temperatures by means of compressive deformation. The yield stress of ZnO in the temperature range of 650-850 °C was found to be around 10-20 MPa, i.e., extremely lower than that of GaN, a typical wide band-gap semiconductor. On the basis of the observed temperature dependence of yield stress, the activation energy for dislocation motion at elevated temperatures in ZnO is deduced to be 0.7-1.2 eV, which follows the relation of activation energy for dislocation motion versus band-gap energy known in a variety of semiconductors.
AB - The mechanical strength of bulk single crystal wurtzite ZnO was investigated at elevated temperatures by means of compressive deformation. The yield stress of ZnO in the temperature range of 650-850 °C was found to be around 10-20 MPa, i.e., extremely lower than that of GaN, a typical wide band-gap semiconductor. On the basis of the observed temperature dependence of yield stress, the activation energy for dislocation motion at elevated temperatures in ZnO is deduced to be 0.7-1.2 eV, which follows the relation of activation energy for dislocation motion versus band-gap energy known in a variety of semiconductors.
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U2 - 10.1063/1.2908193
DO - 10.1063/1.2908193
M3 - Article
AN - SCOPUS:43949143554
VL - 103
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 9
M1 - 093502
ER -