High-Temperature Solution Growth and Characterization of Chromium Disilicide

Toetsu Shishido; Shigeru Okada; Yoshio Ishizawa; Kunio Kudou; Kiyokata Iizumi; Yutaka Sawada; Hiroyuki Horiuchi; Katsuhiko Inaba; Takashi Sekiguchi; Jinhua Ye; Satoru Miyashita; Akiko Nomura; Takamasa Sugawara; Kazuo Obara; Yoshihiro Murakami; Kozo Fujiwara; Toru Ujihara; Gen Sazaki; Noritaka Usami; Masaoki Oku; Yoshihiko Yokoyama; Shigemi Kohiki; Yoshiyuki Kawazoe; Kazuo Nakajima

High-Temperature Solution Growth and Characterization of Chromium Disilicide

Toetsu Shishido, Shigeru Okada, Yoshio Ishizawa, Kunio Kudou, Kiyokata Iizumi, Yutaka Sawada, Hiroyuki Horiuchi, Katsuhiko Inaba, Takashi Sekiguchi, Jinhua Ye, Satoru Miyashita, Akiko Nomura, Takamasa Sugawara, Kazuo Obara, Yoshihiro Murakami, Kozo Fujiwara, Toru Ujihara, Gen Sazaki, Noritaka Usami, Masaoki OkuYoshihiko Yokoyama, Shigemi Kohiki, Yoshiyuki Kawazoe, Kazuo Nakajima

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

Single crystals of CrSi₂ were obtained in the form of hexagonal prisms by a high-temperature solution growth method using molten tin as a solvent. Their maximum dimensions were approximately 0.3 mm in diameter and 2.5 mm in length. The crystals had hexagonal symmetry with space group P6 ₂22 and their lattice parameters were a=0.425(2) nm and c= 0.6375(1) nm. The crystals were semiconducting. The value of the micro-Vickers hardness for the {11̄00} face with hexagonal symmetry was 11.2±0.4GPa. The weight gain of the crystals heated to 1473 K in air was negligible.

Original language	English
Pages (from-to)	7292-7293
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	12
Publication status	Published - 2003 Dec 1

Keywords

CrSi
Electric property
Flux growth
Hardness
Oxidation resistivity

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Shishido, T., Okada, S., Ishizawa, Y., Kudou, K., Iizumi, K., Sawada, Y., Horiuchi, H., Inaba, K., Sekiguchi, T., Ye, J., Miyashita, S., Nomura, A., Sugawara, T., Obara, K., Murakami, Y., Fujiwara, K., Ujihara, T., Sazaki, G., Usami, N., ... Nakajima, K. (2003). High-Temperature Solution Growth and Characterization of Chromium Disilicide. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(12), 7292-7293.

High-Temperature Solution Growth and Characterization of Chromium Disilicide. / Shishido, Toetsu; Okada, Shigeru; Ishizawa, Yoshio; Kudou, Kunio; Iizumi, Kiyokata; Sawada, Yutaka; Horiuchi, Hiroyuki; Inaba, Katsuhiko; Sekiguchi, Takashi; Ye, Jinhua; Miyashita, Satoru; Nomura, Akiko; Sugawara, Takamasa; Obara, Kazuo; Murakami, Yoshihiro; Fujiwara, Kozo; Ujihara, Toru; Sazaki, Gen; Usami, Noritaka; Oku, Masaoki; Yokoyama, Yoshihiko; Kohiki, Shigemi; Kawazoe, Yoshiyuki; Nakajima, Kazuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 12, 01.12.2003, p. 7292-7293.

Research output: Contribution to journal › Article

Shishido, T, Okada, S, Ishizawa, Y, Kudou, K, Iizumi, K, Sawada, Y, Horiuchi, H, Inaba, K, Sekiguchi, T, Ye, J, Miyashita, S, Nomura, A, Sugawara, T, Obara, K, Murakami, Y, Fujiwara, K, Ujihara, T, Sazaki, G, Usami, N, Oku, M, Yokoyama, Y, Kohiki, S, Kawazoe, Y & Nakajima, K 2003, 'High-Temperature Solution Growth and Characterization of Chromium Disilicide', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 42, no. 12, pp. 7292-7293.

Shishido, Toetsu ; Okada, Shigeru ; Ishizawa, Yoshio ; Kudou, Kunio ; Iizumi, Kiyokata ; Sawada, Yutaka ; Horiuchi, Hiroyuki ; Inaba, Katsuhiko ; Sekiguchi, Takashi ; Ye, Jinhua ; Miyashita, Satoru ; Nomura, Akiko ; Sugawara, Takamasa ; Obara, Kazuo ; Murakami, Yoshihiro ; Fujiwara, Kozo ; Ujihara, Toru ; Sazaki, Gen ; Usami, Noritaka ; Oku, Masaoki ; Yokoyama, Yoshihiko ; Kohiki, Shigemi ; Kawazoe, Yoshiyuki ; Nakajima, Kazuo. / High-Temperature Solution Growth and Characterization of Chromium Disilicide. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 12. pp. 7292-7293.

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abstract = "Single crystals of CrSi2 were obtained in the form of hexagonal prisms by a high-temperature solution growth method using molten tin as a solvent. Their maximum dimensions were approximately 0.3 mm in diameter and 2.5 mm in length. The crystals had hexagonal symmetry with space group P6 222 and their lattice parameters were a=0.425(2) nm and c= 0.6375(1) nm. The crystals were semiconducting. The value of the micro-Vickers hardness for the {1{\=1}00} face with hexagonal symmetry was 11.2±0.4GPa. The weight gain of the crystals heated to 1473 K in air was negligible.",

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AU - Usami, Noritaka

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AB - Single crystals of CrSi2 were obtained in the form of hexagonal prisms by a high-temperature solution growth method using molten tin as a solvent. Their maximum dimensions were approximately 0.3 mm in diameter and 2.5 mm in length. The crystals had hexagonal symmetry with space group P6 222 and their lattice parameters were a=0.425(2) nm and c= 0.6375(1) nm. The crystals were semiconducting. The value of the micro-Vickers hardness for the {11̄00} face with hexagonal symmetry was 11.2±0.4GPa. The weight gain of the crystals heated to 1473 K in air was negligible.

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