High-Temperature Solution Growth and Characterization of Chromium Disilicide

Toetsu Shishido; Shigeru Okada; Yoshio Ishizawa; Kunio Kudou; Kiyokata Iizumi; Yutaka Sawada; Hiroyuki Horiuchi; Katsuhiko Inaba; Takashi Sekiguchi; Jinhua Ye; Satoru Miyashita; Akiko Nomura; Takamasa Sugawara; Kazuo Obara; Yoshihiro Murakami; Kozo Fujiwara; Toru Ujihara; Gen Sazaki; Noritaka Usami; Masaoki Oku; Yoshihiko Yokoyama; Shigemi Kohiki; Yoshiyuki Kawazoe; Kazuo Nakajima

doi:10.1143/jjap.42.7292

High-Temperature Solution Growth and Characterization of Chromium Disilicide

Toetsu Shishido, Shigeru Okada, Yoshio Ishizawa, Kunio Kudou, Kiyokata Iizumi, Yutaka Sawada, Hiroyuki Horiuchi, Katsuhiko Inaba, Takashi Sekiguchi, Jinhua Ye, Satoru Miyashita, Akiko Nomura, Takamasa Sugawara, Kazuo Obara, Yoshihiro Murakami, Kozo Fujiwara, Toru Ujihara, Gen Sazaki, Noritaka Usami, Masaoki OkuYoshihiko Yokoyama, Shigemi Kohiki, Yoshiyuki Kawazoe, Kazuo Nakajima

Collaborative Research Center on Energy Materials

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Single crystals of CrSi₂ were obtained in the form of hexagonal prisms by a high-temperature solution growth method using molten tin as a solvent. Their maximum dimensions were approximately 0.3 mm in diameter and 2.5 mm in length. The crystals had hexagonal symmetry with space group P6 ₂22 and their lattice parameters were a=0.425(2) nm and c= 0.6375(1) nm. The crystals were semiconducting. The value of the micro-Vickers hardness for the {11̄00} face with hexagonal symmetry was 11.2±0.4GPa. The weight gain of the crystals heated to 1473 K in air was negligible.

Original language	English
Pages (from-to)	7292-7293
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	42
Issue number	12
DOIs	https://doi.org/10.1143/jjap.42.7292
Publication status	Published - 2003 Dec

Keywords

CrSi
Electric property
Flux growth
Hardness
Oxidation resistivity

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/jjap.42.7292

Cite this

Shishido, T., Okada, S., Ishizawa, Y., Kudou, K., Iizumi, K., Sawada, Y., Horiuchi, H., Inaba, K., Sekiguchi, T., Ye, J., Miyashita, S., Nomura, A., Sugawara, T., Obara, K., Murakami, Y., Fujiwara, K., Ujihara, T., Sazaki, G., Usami, N., ... Nakajima, K. (2003). High-Temperature Solution Growth and Characterization of Chromium Disilicide. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(12), 7292-7293. https://doi.org/10.1143/jjap.42.7292

High-Temperature Solution Growth and Characterization of Chromium Disilicide. / Shishido, Toetsu; Okada, Shigeru; Ishizawa, Yoshio; Kudou, Kunio; Iizumi, Kiyokata; Sawada, Yutaka; Horiuchi, Hiroyuki; Inaba, Katsuhiko; Sekiguchi, Takashi; Ye, Jinhua; Miyashita, Satoru; Nomura, Akiko; Sugawara, Takamasa; Obara, Kazuo; Murakami, Yoshihiro; Fujiwara, Kozo; Ujihara, Toru; Sazaki, Gen; Usami, Noritaka; Oku, Masaoki; Yokoyama, Yoshihiko; Kohiki, Shigemi; Kawazoe, Yoshiyuki; Nakajima, Kazuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 12, 12.2003, p. 7292-7293.

Research output: Contribution to journal › Article › peer-review

Shishido, T, Okada, S, Ishizawa, Y, Kudou, K, Iizumi, K, Sawada, Y, Horiuchi, H, Inaba, K, Sekiguchi, T, Ye, J, Miyashita, S, Nomura, A, Sugawara, T, Obara, K, Murakami, Y, Fujiwara, K, Ujihara, T, Sazaki, G, Usami, N, Oku, M, Yokoyama, Y, Kohiki, S, Kawazoe, Y & Nakajima, K 2003, 'High-Temperature Solution Growth and Characterization of Chromium Disilicide', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 42, no. 12, pp. 7292-7293. https://doi.org/10.1143/jjap.42.7292

Shishido, Toetsu ; Okada, Shigeru ; Ishizawa, Yoshio ; Kudou, Kunio ; Iizumi, Kiyokata ; Sawada, Yutaka ; Horiuchi, Hiroyuki ; Inaba, Katsuhiko ; Sekiguchi, Takashi ; Ye, Jinhua ; Miyashita, Satoru ; Nomura, Akiko ; Sugawara, Takamasa ; Obara, Kazuo ; Murakami, Yoshihiro ; Fujiwara, Kozo ; Ujihara, Toru ; Sazaki, Gen ; Usami, Noritaka ; Oku, Masaoki ; Yokoyama, Yoshihiko ; Kohiki, Shigemi ; Kawazoe, Yoshiyuki ; Nakajima, Kazuo. / High-Temperature Solution Growth and Characterization of Chromium Disilicide. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 12. pp. 7292-7293.

@article{e6ec2901f24142fd9281e4802b0efdea,

title = "High-Temperature Solution Growth and Characterization of Chromium Disilicide",

abstract = "Single crystals of CrSi2 were obtained in the form of hexagonal prisms by a high-temperature solution growth method using molten tin as a solvent. Their maximum dimensions were approximately 0.3 mm in diameter and 2.5 mm in length. The crystals had hexagonal symmetry with space group P6 222 and their lattice parameters were a=0.425(2) nm and c= 0.6375(1) nm. The crystals were semiconducting. The value of the micro-Vickers hardness for the {1{\=1}00} face with hexagonal symmetry was 11.2±0.4GPa. The weight gain of the crystals heated to 1473 K in air was negligible.",

keywords = "CrSi, Electric property, Flux growth, Hardness, Oxidation resistivity",

author = "Toetsu Shishido and Shigeru Okada and Yoshio Ishizawa and Kunio Kudou and Kiyokata Iizumi and Yutaka Sawada and Hiroyuki Horiuchi and Katsuhiko Inaba and Takashi Sekiguchi and Jinhua Ye and Satoru Miyashita and Akiko Nomura and Takamasa Sugawara and Kazuo Obara and Yoshihiro Murakami and Kozo Fujiwara and Toru Ujihara and Gen Sazaki and Noritaka Usami and Masaoki Oku and Yoshihiko Yokoyama and Shigemi Kohiki and Yoshiyuki Kawazoe and Kazuo Nakajima",

year = "2003",

month = dec,

doi = "10.1143/jjap.42.7292",

language = "English",

volume = "42",

pages = "7292--7293",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "12",

}

TY - JOUR

T1 - High-Temperature Solution Growth and Characterization of Chromium Disilicide

AU - Shishido, Toetsu

AU - Okada, Shigeru

AU - Ishizawa, Yoshio

AU - Kudou, Kunio

AU - Iizumi, Kiyokata

AU - Sawada, Yutaka

AU - Horiuchi, Hiroyuki

AU - Inaba, Katsuhiko

AU - Sekiguchi, Takashi

AU - Ye, Jinhua

AU - Miyashita, Satoru

AU - Nomura, Akiko

AU - Sugawara, Takamasa

AU - Obara, Kazuo

AU - Murakami, Yoshihiro

AU - Fujiwara, Kozo

AU - Ujihara, Toru

AU - Sazaki, Gen

AU - Usami, Noritaka

AU - Oku, Masaoki

AU - Yokoyama, Yoshihiko

AU - Kohiki, Shigemi

AU - Kawazoe, Yoshiyuki

AU - Nakajima, Kazuo

PY - 2003/12

Y1 - 2003/12

N2 - Single crystals of CrSi2 were obtained in the form of hexagonal prisms by a high-temperature solution growth method using molten tin as a solvent. Their maximum dimensions were approximately 0.3 mm in diameter and 2.5 mm in length. The crystals had hexagonal symmetry with space group P6 222 and their lattice parameters were a=0.425(2) nm and c= 0.6375(1) nm. The crystals were semiconducting. The value of the micro-Vickers hardness for the {11̄00} face with hexagonal symmetry was 11.2±0.4GPa. The weight gain of the crystals heated to 1473 K in air was negligible.

AB - Single crystals of CrSi2 were obtained in the form of hexagonal prisms by a high-temperature solution growth method using molten tin as a solvent. Their maximum dimensions were approximately 0.3 mm in diameter and 2.5 mm in length. The crystals had hexagonal symmetry with space group P6 222 and their lattice parameters were a=0.425(2) nm and c= 0.6375(1) nm. The crystals were semiconducting. The value of the micro-Vickers hardness for the {11̄00} face with hexagonal symmetry was 11.2±0.4GPa. The weight gain of the crystals heated to 1473 K in air was negligible.

KW - CrSi

KW - Electric property

KW - Flux growth

KW - Hardness

KW - Oxidation resistivity

UR - http://www.scopus.com/inward/record.url?scp=10744220992&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=10744220992&partnerID=8YFLogxK

U2 - 10.1143/jjap.42.7292

DO - 10.1143/jjap.42.7292

M3 - Article

AN - SCOPUS:10744220992

VL - 42

SP - 7292

EP - 7293

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 12

ER -

High-Temperature Solution Growth and Characterization of Chromium Disilicide

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this