Abstract
Single crystals of CrSi2 were obtained in the form of hexagonal prisms by a high-temperature solution growth method using molten tin as a solvent. Their maximum dimensions were approximately 0.3 mm in diameter and 2.5 mm in length. The crystals had hexagonal symmetry with space group P6 222 and their lattice parameters were a=0.425(2) nm and c= 0.6375(1) nm. The crystals were semiconducting. The value of the micro-Vickers hardness for the {11̄00} face with hexagonal symmetry was 11.2±0.4GPa. The weight gain of the crystals heated to 1473 K in air was negligible.
Original language | English |
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Pages (from-to) | 7292-7293 |
Number of pages | 2 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 42 |
Issue number | 12 |
DOIs | |
Publication status | Published - 2003 Dec |
Keywords
- CrSi
- Electric property
- Flux growth
- Hardness
- Oxidation resistivity
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)