High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3

Fumimasa Horikiri, Tomoyuki Ichikawa, Atsushi Kaimai, Keiji Yashiro, Hiroshige Matsumoto, Tatsuya Kawada, Junichiro Mizusaki

Research output: Contribution to conferencePaper

Abstract

High temperature photovoltaic effects at the Nb doped SrTiO3 (STNO) / Indium Tin Oxide (ITO) interface were investigated. The STNO/ITO interface was prepared by Pulsed Laser Deposition Technique (PLD) on 0.01 wt% Nb doped SrTiO3 single crystal (100) at 873 K in 1 Pa O2 condition. A depletion layer of Schottky barrier formed at the STNO/ITO interface was irradiated with UV-light, the wavelength of which corresponds to the band gap of STNO at high temperatures (673-873K). The current-voltage (I-V) characteristics were measured at temperatures up to 873K in various oxygen partial pressures. It was found that the STNO/TTO interface shows rectification and photovoltaic effects at the temperatures studied, which vary with oxygen partial pressure. These phenomena ensure the existence of Schottky barriers at high temperatures and the possibility of high-temperature photovoltaic energy conversion.

Original languageEnglish
Pages203-209
Number of pages7
Publication statusPublished - 2004 Dec 1
Event206th ECS Meeting - Honolulu, HI, United States
Duration: 2004 Oct 32004 Oct 8

Other

Other206th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period04/10/304/10/8

ASJC Scopus subject areas

  • Engineering(all)

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    Horikiri, F., Ichikawa, T., Kaimai, A., Yashiro, K., Matsumoto, H., Kawada, T., & Mizusaki, J. (2004). High temperature photovoltaic effect at the interface of ITO / Nb doped SrTiO3. 203-209. Paper presented at 206th ECS Meeting, Honolulu, HI, United States.