Abstract
The hardness of single crystal GaN (gallium nitride) at elevated temperature is measured for the first time and compared with other materials. A Vickers indentation method was used to determine the hardness of crack-free GaN samples under an applied load of 0.5N in the temperature range 20 - 1200°C. The hardness is 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN at high temperature is deduced.
| Original language | English |
|---|---|
| Pages (from-to) | W3.90.1 - W3.90.5 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 595 |
| Publication status | Published - 2000 Jan 1 |
| Event | The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: 1999 Nov 28 → 1999 Dec 3 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering