High temperature hardness of bulk single crystal GaN

I. Yonenaga, T. Hoshi, A. Usui

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The hardness of single crystal GaN (gallium nitride) at elevated temperature is measured for the first time and compared with other materials. A Vickers indentation method was used to determine the hardness of crack-free GaN samples under an applied load of 0.5N in the temperature range 20-1200°C. The hardness is 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures GaN shows higher hardness than Si and GaAs. A high mechanical stability for GaN at high temperature is deduced.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberSUPPL. 1
DOIs
Publication statusPublished - 2000

ASJC Scopus subject areas

  • Materials Science(all)

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