Abstract
The hardness of single-crystal gallium nitride of 500 μm thickness at elevated temperatures is measured and compared with those of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5-5 N in the temperature range 20-1200 °C. The average hardness is 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures, GaN shows higher hardness than Si, GaAs, and ZnSe. A high mechanical stability for GaN at high temperature is deduced.
| Original language | English |
|---|---|
| Pages (from-to) | 10319-10323 |
| Number of pages | 5 |
| Journal | Journal of Physics Condensed Matter |
| Volume | 12 |
| Issue number | 49 |
| DOIs | |
| Publication status | Published - 2000 Dec 11 |
| Externally published | Yes |
| Event | Extended Defects in Semiconductors 2000 - Brighton, UK Duration: 2000 Jul 18 → 2000 Jul 22 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics