High-temperature hardness of bulk single-crystal gallium nitride - in comparison with other wide-gap materials

I. Yonenaga, T. Hoshi, A. Usui

Research output: Contribution to journalConference articlepeer-review

24 Citations (Scopus)

Abstract

The hardness of single-crystal gallium nitride of 500 μm thickness at elevated temperatures is measured and compared with those of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5-5 N in the temperature range 20-1200 °C. The average hardness is 10.8 GPa at room temperature, which is comparable to that of Si. At elevated temperatures, GaN shows higher hardness than Si, GaAs, and ZnSe. A high mechanical stability for GaN at high temperature is deduced.

Original languageEnglish
Pages (from-to)10319-10323
Number of pages5
JournalJournal of Physics Condensed Matter
Volume12
Issue number49
DOIs
Publication statusPublished - 2000 Dec 11
EventExtended Defects in Semiconductors 2000 - Brighton, UK
Duration: 2000 Jul 182000 Jul 22

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'High-temperature hardness of bulk single-crystal gallium nitride - in comparison with other wide-gap materials'. Together they form a unique fingerprint.

Cite this