High-temperature hardness of bulk single-crystal AlN

Ichiro Yonenaga, Andrey Nikolaev, Yuriy Melnik, Vladimir Dmitriev

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


The hardness of single-crystal aluminum nitride (AlN) 0.5-mm-thick wafers was measured at elevated temperatures and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5-5 N in the temperature range 20-1400°C. The average hardness was measured as 17.7 GPa at room temperature. AlN exhibits a hardness higher than that of GaN in the entire temperature range investigated. A high mechanical stability for AlN at high temperatures is deduced.

Original languageEnglish
Pages (from-to)L426-L427
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number5 A
Publication statusPublished - 2001 May 1


  • Aluminum nitride
  • Bulk crystal
  • Hydride vapor phase epitaxy
  • Mechanical stability
  • Mechanical strength
  • Vickers hardness

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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