High-temperature hardness of bulk single-crystal AlN

Ichiro Yonenaga; Andrey Nikolaev; Yuriy Melnik; Vladimir Dmitriev

High-temperature hardness of bulk single-crystal AlN

Ichiro Yonenaga, Andrey Nikolaev, Yuriy Melnik, Vladimir Dmitriev

Materials Design Division

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The hardness of single-crystal aluminum nitride (AlN) 0.5-mm-thick wafers was measured at elevated temperatures and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5 - 5 N in the temperature range 20 - 1400°C. The average hardness was measured as 17.7 GPa at room temperature, harder than GaN and InN. The fracture toughness is 0.5 MPa•m^1/2. AlN exhibits the hardness higher than that of GaN in the entire temperature range investigated. Up to about 1100°C, AlN maintains its hardness and thus, a high mechanical stability for AlN at elevated temperatures is deduced.

Original language	English
Pages (from-to)	609-613
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	693
Publication status	Published - 2002 Jan 1

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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abstract = "The hardness of single-crystal aluminum nitride (AlN) 0.5-mm-thick wafers was measured at elevated temperatures and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5 - 5 N in the temperature range 20 - 1400°C. The average hardness was measured as 17.7 GPa at room temperature, harder than GaN and InN. The fracture toughness is 0.5 MPa•m1/2. AlN exhibits the hardness higher than that of GaN in the entire temperature range investigated. Up to about 1100°C, AlN maintains its hardness and thus, a high mechanical stability for AlN at elevated temperatures is deduced.",

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T1 - High-temperature hardness of bulk single-crystal AlN

AU - Yonenaga, Ichiro

AU - Nikolaev, Andrey

AU - Melnik, Yuriy

AU - Dmitriev, Vladimir

PY - 2002/1/1

Y1 - 2002/1/1

N2 - The hardness of single-crystal aluminum nitride (AlN) 0.5-mm-thick wafers was measured at elevated temperatures and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5 - 5 N in the temperature range 20 - 1400°C. The average hardness was measured as 17.7 GPa at room temperature, harder than GaN and InN. The fracture toughness is 0.5 MPa•m1/2. AlN exhibits the hardness higher than that of GaN in the entire temperature range investigated. Up to about 1100°C, AlN maintains its hardness and thus, a high mechanical stability for AlN at elevated temperatures is deduced.

AB - The hardness of single-crystal aluminum nitride (AlN) 0.5-mm-thick wafers was measured at elevated temperatures and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5 - 5 N in the temperature range 20 - 1400°C. The average hardness was measured as 17.7 GPa at room temperature, harder than GaN and InN. The fracture toughness is 0.5 MPa•m1/2. AlN exhibits the hardness higher than that of GaN in the entire temperature range investigated. Up to about 1100°C, AlN maintains its hardness and thus, a high mechanical stability for AlN at elevated temperatures is deduced.

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M3 - Article

AN - SCOPUS:0036374111

VL - 693

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EP - 613

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -

High-temperature hardness of bulk single-crystal AlN

Abstract

ASJC Scopus subject areas

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