ZnS films were grown on Si (100) at high temperatures by pulsed laser deposition using a KrF excimer laser. The growth temperature was varied from 200 to 700°C and all films were found to have a specific preferential orientation. With increasing Ts, growth rate decreased but the quality of the film improved. The highest quality ZnS film was obtained at 700°C. The presence of ZnS+ ions among the ablation products of a ZnS target was verified by laser desorption time of flight mass spectroscopy measurements. ZnO was formed by thermal oxidation of ZnS and the films showed strong near band-edge emission at 3.26 eV.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)