High temperature evaporation characteristics of amorphous Si3N4-C composite prepared by chemical vapour deposition

Takashi Goto, Toshio Hirai

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Evaporation characteristics of amorphous Si3N4 and amorphous Si3N4-C composite (6 wt % C) prepared by the chemical vapour deposition (CVD) were investigated in the temperature range of 1400 to 1650°C in a vacuum of about 10-6 torr. The weight loss due to the evaporation was linear with time for all the samples tested. Evaporation rate of the amorphous CVD-(Si3N4-C) composite was 50 to 70% of that for the amorphous CVD-Si3 N4. The activation energy for evaporation, calculated from the temperature dependence of the evaporation rates, was about 160 kcal mol-1 for both samples. The carbon dispersed in the amorphous CVD-(Si3N4-C) composite reacted at the time of heat-treatment with the amorphous Si3N4 matrix and formed β-SiC particles. The β-SiC particles were found to be about 100 nm in diameter and connected each other to form a three-dimensional network structure.

Original languageEnglish
Pages (from-to)2842-2846
Number of pages5
JournalJournal of Materials Science
Volume22
Issue number8
DOIs
Publication statusPublished - 1987 Aug 1

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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