High-temperature epitaxy of metastable sulfides on oxide substrates using stoichiometric transportation

Y. Z. Yoo; T. Chikyow; P. Ahmet; M. Kawasaki; T. Makino; Y. Segawa; H. Koinuma

doi:10.1002/1521-4095(200111)13:21<1624::AID-ADMA1624>3.0.CO;2-B

High-temperature epitaxy of metastable sulfides on oxide substrates using stoichiometric transportation

Y. Z. Yoo, T. Chikyow, P. Ahmet, M. Kawasaki, T. Makino, Y. Segawa, H. Koinuma

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

Pulsed laser deposition (PLD) has been employed to grow W-ZnS films on c-plane (001) sapphire substrates at high temperature (800°C). This enabled the observation of excitonic resonances and the investigation of optical properties of W-ZnS films for the first time. High-temperature growth of W-ZnS can trigger novel integrations, such as heterostructures or alloys between sulfides and oxides or nitrides. It can also stimulate investigations into the growth of sulfides on various materials and could provide an innovative method for the application of sulfides.

Original language	English
Pages (from-to)	1624-1627
Number of pages	4
Journal	Advanced Materials
Volume	13
Issue number	21
DOIs	https://doi.org/10.1002/1521-4095(200111)13:21<1624::AID-ADMA1624>3.0.CO;2-B
Publication status	Published - 2001 Nov 2
Externally published	Yes

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/1521-4095(200111)13:21<1624::AID-ADMA1624>3.0.CO;2-B

Cite this

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abstract = "Pulsed laser deposition (PLD) has been employed to grow W-ZnS films on c-plane (001) sapphire substrates at high temperature (800°C). This enabled the observation of excitonic resonances and the investigation of optical properties of W-ZnS films for the first time. High-temperature growth of W-ZnS can trigger novel integrations, such as heterostructures or alloys between sulfides and oxides or nitrides. It can also stimulate investigations into the growth of sulfides on various materials and could provide an innovative method for the application of sulfides.",

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T1 - High-temperature epitaxy of metastable sulfides on oxide substrates using stoichiometric transportation

AU - Yoo, Y. Z.

AU - Chikyow, T.

AU - Ahmet, P.

AU - Kawasaki, M.

AU - Makino, T.

AU - Segawa, Y.

AU - Koinuma, H.

PY - 2001/11/2

Y1 - 2001/11/2

N2 - Pulsed laser deposition (PLD) has been employed to grow W-ZnS films on c-plane (001) sapphire substrates at high temperature (800°C). This enabled the observation of excitonic resonances and the investigation of optical properties of W-ZnS films for the first time. High-temperature growth of W-ZnS can trigger novel integrations, such as heterostructures or alloys between sulfides and oxides or nitrides. It can also stimulate investigations into the growth of sulfides on various materials and could provide an innovative method for the application of sulfides.

AB - Pulsed laser deposition (PLD) has been employed to grow W-ZnS films on c-plane (001) sapphire substrates at high temperature (800°C). This enabled the observation of excitonic resonances and the investigation of optical properties of W-ZnS films for the first time. High-temperature growth of W-ZnS can trigger novel integrations, such as heterostructures or alloys between sulfides and oxides or nitrides. It can also stimulate investigations into the growth of sulfides on various materials and could provide an innovative method for the application of sulfides.

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High-temperature epitaxy of metastable sulfides on oxide substrates using stoichiometric transportation

Abstract

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