High-temperature creep resistance in Yb2O3-fluxed Si3N4

H. Yoshida; Yuichi Ikuhara; T. Sakuma

High-temperature creep resistance in Yb₂O₃-fluxed Si₃N₄

H. Yoshida, Yuichi Ikuhara, T. Sakuma

Research output: Contribution to conference › Paper › peer-review

Abstract

High-temperature creep resistance in Si₃N₄ is highly improved by crystallization of intergranular glassy phase. The Si₃N₄-4.7mol%Yb₂O₃-1.1mol%SiO₂ fabricated by hot-pressing at 1750°C for 4 h under a pressure of 20 MPa in nitrogen gas flow exhibits excellent creep resistance at 1370°C in comparison with other Si₃N₄ ceramics doped with rare-earth oxides. The steady-state creep rate is about 1 × 10^-8 s^-1 at 1370°C under a stress of 200 MPa in the Yb₂O₃-fluxed Si₃N₄. The grain boundary phase consists of about 80% of crystalline Yb₄Si₂O₇N₂ phase and the rest of amorphous phase. The excellent creep resistance of this material is caused by the grain boundary Yb₄Si₂O₇N₂ phase, which has a high melting temperature of 1870°C and is easily crystallized during sintering.

Original language	English
Pages	653-662
Number of pages	10
Publication status	Published - 1997 Dec 1
Event	Proceedings of the 1997 7th International Conference on Creep and Fracture of Engineering Materials and Structures - Irvine, CA, USA Duration: 1997 Aug 10 → 1997 Aug 15

Other

Other	Proceedings of the 1997 7th International Conference on Creep and Fracture of Engineering Materials and Structures
City	Irvine, CA, USA
Period	97/8/10 → 97/8/15

ASJC Scopus subject areas

Engineering(all)

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title = "High-temperature creep resistance in Yb2O3-fluxed Si3N4",

abstract = "High-temperature creep resistance in Si3N4 is highly improved by crystallization of intergranular glassy phase. The Si3N4-4.7mol%Yb2O3-1.1mol%SiO2 fabricated by hot-pressing at 1750°C for 4 h under a pressure of 20 MPa in nitrogen gas flow exhibits excellent creep resistance at 1370°C in comparison with other Si3N4 ceramics doped with rare-earth oxides. The steady-state creep rate is about 1 × 10-8 s-1 at 1370°C under a stress of 200 MPa in the Yb2O3-fluxed Si3N4. The grain boundary phase consists of about 80% of crystalline Yb4Si2O7N2 phase and the rest of amorphous phase. The excellent creep resistance of this material is caused by the grain boundary Yb4Si2O7N2 phase, which has a high melting temperature of 1870°C and is easily crystallized during sintering.",

author = "H. Yoshida and Yuichi Ikuhara and T. Sakuma",

year = "1997",

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T1 - High-temperature creep resistance in Yb2O3-fluxed Si3N4

AU - Yoshida, H.

AU - Ikuhara, Yuichi

AU - Sakuma, T.

PY - 1997/12/1

Y1 - 1997/12/1

N2 - High-temperature creep resistance in Si3N4 is highly improved by crystallization of intergranular glassy phase. The Si3N4-4.7mol%Yb2O3-1.1mol%SiO2 fabricated by hot-pressing at 1750°C for 4 h under a pressure of 20 MPa in nitrogen gas flow exhibits excellent creep resistance at 1370°C in comparison with other Si3N4 ceramics doped with rare-earth oxides. The steady-state creep rate is about 1 × 10-8 s-1 at 1370°C under a stress of 200 MPa in the Yb2O3-fluxed Si3N4. The grain boundary phase consists of about 80% of crystalline Yb4Si2O7N2 phase and the rest of amorphous phase. The excellent creep resistance of this material is caused by the grain boundary Yb4Si2O7N2 phase, which has a high melting temperature of 1870°C and is easily crystallized during sintering.

AB - High-temperature creep resistance in Si3N4 is highly improved by crystallization of intergranular glassy phase. The Si3N4-4.7mol%Yb2O3-1.1mol%SiO2 fabricated by hot-pressing at 1750°C for 4 h under a pressure of 20 MPa in nitrogen gas flow exhibits excellent creep resistance at 1370°C in comparison with other Si3N4 ceramics doped with rare-earth oxides. The steady-state creep rate is about 1 × 10-8 s-1 at 1370°C under a stress of 200 MPa in the Yb2O3-fluxed Si3N4. The grain boundary phase consists of about 80% of crystalline Yb4Si2O7N2 phase and the rest of amorphous phase. The excellent creep resistance of this material is caused by the grain boundary Yb4Si2O7N2 phase, which has a high melting temperature of 1870°C and is easily crystallized during sintering.

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T2 - Proceedings of the 1997 7th International Conference on Creep and Fracture of Engineering Materials and Structures

Y2 - 10 August 1997 through 15 August 1997

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High-temperature creep resistance in Yb₂O₃-fluxed Si₃N₄

Abstract

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ASJC Scopus subject areas

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