High-temperature creep resistance in rare-earth-doped, fine-grained Al2O3

H. Yoshida, Y. Ikuhara, T. Sakuma

    Research output: Contribution to journalArticlepeer-review

    114 Citations (Scopus)

    Abstract

    High-temperature creep in undoped Al2O3 and La2O3- or Y2O3- or Lu2O3-doped Al2O3 with a grain size of about 1 μm is examined in uniaxial compression testing at temperatures between 1150 and 1350°C. The high-temperature creep resistance in Al2O3 is highly improved by the rare-earth oxide doping in the level of 0.045 mol %, and the creep rate is suppressed in the order La2O3 < Y2O3 < Lu2O3. Rare-earth ions in each doped Al2O3 are found to segregate in Al2O3 grain boundaries without forming amorphous phase or second-phase particles. The activation energy for creep in undoped Al2O3 is estimated to be 410 kJ/mol, while it is about 800 kJ/mol in the three rare-earth oxide-doped Al2O3. The grain boundary diffusivity must be highly reduced by the segregation of the dopant cation in Al2O3 grain boundaries.

    Original languageEnglish
    Pages (from-to)2597-2601
    Number of pages5
    JournalJournal of Materials Research
    Volume13
    Issue number9
    DOIs
    Publication statusPublished - 1998 Sep

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

    Fingerprint Dive into the research topics of 'High-temperature creep resistance in rare-earth-doped, fine-grained Al<sub>2</sub>O<sub>3</sub>'. Together they form a unique fingerprint.

    Cite this