Abstract
The dynamic behavior of an amorphous carbon layer of 3 nm thickness on a SiC particle was examined at high temperature using a high-resolution electron microscope equipped with a real-times video recording system. It was found that the surface carbon layer began to solve into the SiC particle at 600 °C. The layer was completely solved into SiC crystal at 800 °C. The lattice image of SiC changed negligibly at high temperature. If the specimen was cooled back to room temperature, the carbon layer on the SiC particle was recovered.
| Original language | English |
|---|---|
| Pages (from-to) | L219-L221 |
| Journal | Surface Science |
| Volume | 527 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 2003 Mar 10 |
Keywords
- Carbon
- Electron microscopy
- Silicon carbide
- Surface diffusion
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry