High-temperature behavior of an amorphous carbon layer on SiC particles

Yuki Kimura; Yoshio Saito; Chihiro Kaito

doi:10.1016/S0039-6028(03)00011-6

High-temperature behavior of an amorphous carbon layer on SiC particles

Yuki Kimura, Yoshio Saito, Chihiro Kaito

SCI - Earth Science

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The dynamic behavior of an amorphous carbon layer of 3 nm thickness on a SiC particle was examined at high temperature using a high-resolution electron microscope equipped with a real-times video recording system. It was found that the surface carbon layer began to solve into the SiC particle at 600 °C. The layer was completely solved into SiC crystal at 800 °C. The lattice image of SiC changed negligibly at high temperature. If the specimen was cooled back to room temperature, the carbon layer on the SiC particle was recovered.

Original language	English
Pages (from-to)	L219-L221
Journal	Surface Science
Volume	527
Issue number	1-3
DOIs	https://doi.org/10.1016/S0039-6028(03)00011-6
Publication status	Published - 2003 Mar 10

Keywords

Carbon
Electron microscopy
Silicon carbide
Surface diffusion

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(03)00011-6

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title = "High-temperature behavior of an amorphous carbon layer on SiC particles",

abstract = "The dynamic behavior of an amorphous carbon layer of 3 nm thickness on a SiC particle was examined at high temperature using a high-resolution electron microscope equipped with a real-times video recording system. It was found that the surface carbon layer began to solve into the SiC particle at 600 °C. The layer was completely solved into SiC crystal at 800 °C. The lattice image of SiC changed negligibly at high temperature. If the specimen was cooled back to room temperature, the carbon layer on the SiC particle was recovered.",

keywords = "Carbon, Electron microscopy, Silicon carbide, Surface diffusion",

author = "Yuki Kimura and Yoshio Saito and Chihiro Kaito",

note = "Funding Information: This work was supported in part by grants from JSPS Research fellowships for Young Scientists.",

year = "2003",

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doi = "10.1016/S0039-6028(03)00011-6",

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T1 - High-temperature behavior of an amorphous carbon layer on SiC particles

AU - Kimura, Yuki

AU - Saito, Yoshio

AU - Kaito, Chihiro

N1 - Funding Information: This work was supported in part by grants from JSPS Research fellowships for Young Scientists.

PY - 2003/3/10

Y1 - 2003/3/10

N2 - The dynamic behavior of an amorphous carbon layer of 3 nm thickness on a SiC particle was examined at high temperature using a high-resolution electron microscope equipped with a real-times video recording system. It was found that the surface carbon layer began to solve into the SiC particle at 600 °C. The layer was completely solved into SiC crystal at 800 °C. The lattice image of SiC changed negligibly at high temperature. If the specimen was cooled back to room temperature, the carbon layer on the SiC particle was recovered.

AB - The dynamic behavior of an amorphous carbon layer of 3 nm thickness on a SiC particle was examined at high temperature using a high-resolution electron microscope equipped with a real-times video recording system. It was found that the surface carbon layer began to solve into the SiC particle at 600 °C. The layer was completely solved into SiC crystal at 800 °C. The lattice image of SiC changed negligibly at high temperature. If the specimen was cooled back to room temperature, the carbon layer on the SiC particle was recovered.

KW - Carbon

KW - Electron microscopy

KW - Silicon carbide

KW - Surface diffusion

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DO - 10.1016/S0039-6028(03)00011-6

M3 - Article

AN - SCOPUS:0037430712

VL - 527

SP - L219-L221

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -

High-temperature behavior of an amorphous carbon layer on SiC particles

Abstract

Keywords

ASJC Scopus subject areas

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