High-temperature behavior of an amorphous carbon layer on SiC particles

Yuki Kimura, Yoshio Saito, Chihiro Kaito

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


The dynamic behavior of an amorphous carbon layer of 3 nm thickness on a SiC particle was examined at high temperature using a high-resolution electron microscope equipped with a real-times video recording system. It was found that the surface carbon layer began to solve into the SiC particle at 600 °C. The layer was completely solved into SiC crystal at 800 °C. The lattice image of SiC changed negligibly at high temperature. If the specimen was cooled back to room temperature, the carbon layer on the SiC particle was recovered.

Original languageEnglish
Pages (from-to)L219-L221
JournalSurface Science
Issue number1-3
Publication statusPublished - 2003 Mar 10


  • Carbon
  • Electron microscopy
  • Silicon carbide
  • Surface diffusion

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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