High temperature ballistic transport observed in AlGaAs/InGaAs/GaAs small four-terminal structures

Y. Hirayama, S. Tarucha

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

Four-terminal structures are fabricated by focused-ion-beam (FIB) scanning on an AlGaAs/InGaAs/GaAs modulation doped structure. The large carrier density of this system results in small depletion spreading and a 260-nm-square four-terminal structure is successfully formed. The bend resistance of this structure indicates that ballistic coupling between two facing terminals remains up to room temperature. Thermal broadening of electron energy enhances the ballistic nature of the system at high temperature.

Original languageEnglish
Pages (from-to)2366-2368
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number17
DOIs
Publication statusPublished - 1993 Dec 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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