High-temperature active oxidation of CVD-Si3N4 in ArO2 atmosphere

Takayuki Narushima; Yasutaka Iguchi; Takashi Goto; Toshio Hirai; Yoshio Yokoyama

doi:10.1016/0167-2738(92)90389-7

High-temperature active oxidation of CVD-Si₃N₄ in ArO₂ atmosphere

Takayuki Narushima, Yasutaka Iguchi, Takashi Goto, Toshio Hirai, Yoshio Yokoyama

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Active oxidation of CVD-Si₃N₄ in ArO₂ atmospheres was investigated at temperatures from 1823 to 1923 K. Active oxidation rates increased with increasing oxygen partial pressure, temperature and total gas flow rate. The rate-controlling step for active oxidation is oxygen diffusion through a gaseous boundary layer. The transition from active to passive oxidation was observed at a certain oxygen partial pressure. The transition behavior is discussed using Wagner's model.

Original language	English
Pages (from-to)	265-269
Number of pages	5
Journal	Solid State Ionics
Volume	53-56
Issue number	PART 1
DOIs	https://doi.org/10.1016/0167-2738(92)90389-7
Publication status	Published - 1992 Jan 1

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

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abstract = "Active oxidation of CVD-Si3N4 in ArO2 atmospheres was investigated at temperatures from 1823 to 1923 K. Active oxidation rates increased with increasing oxygen partial pressure, temperature and total gas flow rate. The rate-controlling step for active oxidation is oxygen diffusion through a gaseous boundary layer. The transition from active to passive oxidation was observed at a certain oxygen partial pressure. The transition behavior is discussed using Wagner's model.",

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T1 - High-temperature active oxidation of CVD-Si3N4 in ArO2 atmosphere

AU - Narushima, Takayuki

AU - Iguchi, Yasutaka

AU - Goto, Takashi

AU - Hirai, Toshio

AU - Yokoyama, Yoshio

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Active oxidation of CVD-Si3N4 in ArO2 atmospheres was investigated at temperatures from 1823 to 1923 K. Active oxidation rates increased with increasing oxygen partial pressure, temperature and total gas flow rate. The rate-controlling step for active oxidation is oxygen diffusion through a gaseous boundary layer. The transition from active to passive oxidation was observed at a certain oxygen partial pressure. The transition behavior is discussed using Wagner's model.

AB - Active oxidation of CVD-Si3N4 in ArO2 atmospheres was investigated at temperatures from 1823 to 1923 K. Active oxidation rates increased with increasing oxygen partial pressure, temperature and total gas flow rate. The rate-controlling step for active oxidation is oxygen diffusion through a gaseous boundary layer. The transition from active to passive oxidation was observed at a certain oxygen partial pressure. The transition behavior is discussed using Wagner's model.

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JO - Solid State Ionics

JF - Solid State Ionics

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ER -

High-temperature active oxidation of CVD-Si₃N₄ in ArO₂ atmosphere

Abstract

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