High spin-torque diode sensitivity in CoFeB/MgO/CoFeB magnetic tunnel junctions under DC bias currents

Shota Ishibashi, Ken Ando, Takeshi Seki, Takayuki Nozaki, Hitoshi Kubota, Satoshi Yakata, Hiroki Maehara, Akio Fukushima, Shinji Yuasa, Yoshishige Suzuki

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

We report a large enhancement of spin-torque diode sensitivity in CoFeB/MgO/CoFeB magnetic tunnel junctions measured under perpendicular magnetic fields and dc bias currents. In the measurement of homodyne detection, a large dc output voltage of 190 μ V was obtained when an RF signal power of -30 dB·m and a dc current of +1.0 mA were applied. This value corresponds to the diode sensitivity of 190 mV/mW (260 mV/mW after impedance matching correction). The main origin of this enhancement is an offset of the damping torque and an increase in the precession angle induced by the spin-transfer torque due to the dc bias current application.

Original languageEnglish
Article number6028146
Pages (from-to)3373-3376
Number of pages4
JournalIEEE Transactions on Magnetics
Volume47
Issue number10
DOIs
Publication statusPublished - 2011 Oct
Externally publishedYes

Keywords

  • Magnetoresistance effect
  • MgO-based magnetic tunnel junctions (MTJs)
  • spin-torque diode effect
  • spin-torque diode sensitivity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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