High-speed voltage-control spintronics memory focused on reduction in write current

H. Sugiyama, H. Yoda, K. Koi, S. Oikawa, B. Altansargai, T. Inokuchi, S. Shirotori, M. Shimizu, Y. Kato, Y. Ohsawa, M. Ishikawa, A. Tiwari, N. Shimomura, Y. Saito, A. Kurobe

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Low power consumption of high-speed memories such as cache memories will be realized by use of magnetic random access memory (MRAM). We have proposed the voltage-control spintronics memory (VoCSM) as a writing method. The VoCSM has a large operation margin because the current path in writing and the voltage path in reading are separated. The fabrication process we have employed is the two-step self-alignment (TSSA) process that is advantageous for reducing write current and thus addresses one of the MRAM issues. The electrical properties of the VoCSM indicate that the write error rate (WER) steeply decreases depending on write current. This shows the VoCSM is available for low write current. For highspeed operation, differential operation is demonstrated. In this operation, two magnetic tunnel junctions (MTJs) are simultaneously written at write current, and then either of them is in the high-resistance state and the other is in the low-resistance state. Furthermore, we propose and demonstrate that the write current during differential operation is reduced by the U-shape, since the write current beneath two MTJs absolutely flows to the opposite directions in this shape. The VoCSM is suitable for application to high-speed memories.

Original languageEnglish
Title of host publication2017 17th Non-Volatile Memory Technology Symposium, NVMTS 2017 - Conference Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-5
Number of pages5
ISBN (Electronic)9781538604779
DOIs
Publication statusPublished - 2017 Dec 8
Externally publishedYes
Event17th Non-Volatile Memory Technology Symposium, NVMTS 2017 - Aachen, Germany
Duration: 2017 Aug 302017 Sep 1

Publication series

Name2017 17th Non-Volatile Memory Technology Symposium, NVMTS 2017 - Conference Proceedings
Volume2017-December

Other

Other17th Non-Volatile Memory Technology Symposium, NVMTS 2017
CountryGermany
CityAachen
Period17/8/3017/9/1

Keywords

  • Differential operation
  • MRAM
  • MTJ
  • TSSA process
  • U-shape
  • VoCSM
  • Write error rate

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials

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