High-speed SiGe HBTs and their applications

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1 Citation (Scopus)

Abstract

The structure of a high-speed self-aligned SiGe heterojunction bipolar transistor (HBT) was optimized through investigations of its characteristics related to the collector-base and emitter-base junctions. The SiGe HBT was fabricated by selective-epitaxial growth (SEG). As a result of the optimization, its cutoff frequency was increased to 130GHz and its ECL gate-delay time was reduced to 5.3ps. Based on this SiGe HBT, an IC chipset for 40Gb/s optical-fiber-links, a 5.8GHz electronic-toll-collection transceiver IC, and high-speed frequency divider ICs (operating up to the millimeter-wave band) were developed.

Original languageEnglish
Pages (from-to)306-311
Number of pages6
JournalApplied Surface Science
Volume224
Issue number1-4
DOIs
Publication statusPublished - 2004 Mar 15
Externally publishedYes

Keywords

  • Bipolar transistors
  • Crystal growth
  • Epitaxy
  • Heterostructure
  • Microwave circuits
  • Monolithic integrated circuits
  • Optical communication systems

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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