High-Speed Scaled-Down Self-Aligned SEG SiGe HBTs

Katsuyoshi Washio, Eiji Ohue, Reiko Hayami, Akihiro Kodama, Hiromi Shimamoto, Makoto Miura, Katsuya Oda, Isao Suzumura, Tatsuya Tominari, Takashi Hashimoto

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

A scaled-down self-aligned selective-epitaxial-growth (SEG) SiGe HBT, structurally optimized for an emitter scaled down toward 100 nm, was developed. This SiGe HBT features a funnel-shaped emitter electrode and a narrow separation between the emitter and base electrodes. The first feature is effective for suppressing the increase of the emitter resistance, while the second one reduces the base resistance of the scaled-down emitter. The good current-voltage performance - a current gain of 500 for the SiGe HBT with an emitter area of 0.11 × 0.34 μm and VBE standard deviation of less than 0.8 mV for emitter width down to about 0.13 μm - demonstrates the applicability of this SiGe HBT with a narrow emitter. This SiGe HBT demonstrated high-speed operation: an emiiter-coupled logic (ECL) gate delay of 4.8 ps and a maximum operating frequency of 81 GHz for a static frequency divider.

Original languageEnglish
Pages (from-to)2417-2424
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume50
Issue number12
DOIs
Publication statusPublished - 2003 Dec 1
Externally publishedYes

Keywords

  • Bipolar transistors
  • Emitter coupled logic (ECL)
  • Epitaxial growth
  • Frequency conversion
  • Heterojunctions
  • High-speed integrated circuits
  • Millimeter wave bipolar integrated circuitsMIMICs
  • Optical communication

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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