High-speed preparation and dielectric properties of BaTi 4O 9 film by laser chemical vapor deposition

Dongyun Guo, Takashi Goto, Chuanbin Wang, Qiang Shen, Lianmeng Zhang

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


BaTi 4O 9 film was prepared on Pt/Ti/SiO 2/Si substrate by laser chemical vapor deposition. The microstructure and dielectric properties were investigated. The single-phase BaTi 4O 9 film with random orientation was obtained. The surface consisted of round and rectangular grains, and the cross-section was columnar microstructure. The deposition rate (R dep) was 135 μm h -1. The dielectric constant (ε r) and loss (tanδ) were 35 and 0.01, respectively, at 1 MHz. With increasing temperature, ε r increased and showed a broad peak around 736 K, which indicated there might be a phase transition.

Original languageEnglish
Pages (from-to)897-900
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Issue number4
Publication statusPublished - 2012 Apr

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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