Because of its low bandgap, GalnAs lattice matched to InP is a promising material for photodetection for wavelengths to approximately 1.6 μm In this paper we will present data on high speed photodetectors fabricated using n-type GalnAs grown by molecular beam epitaxy (MBE) on semiinsulating InP substrates. The detectors show high speed response (∼200 ps FWHM) with internal gain of ∼10, From the device I-V characteristics, the electron velocity versus electric field curves in GaIn As are inferred. The high mobility and peak velocity of electrons in GalnAs show a direct relation to the performance of the experimental photoconductive detectors.
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering