High-speed optically controlled semiconductor light source with an external cavity

S. Mieda; S. Shiratori; N. Yokota; H. Yasaka; W. Kobayashi

doi:10.1109/MWP.2014.6994507

High-speed optically controlled semiconductor light source with an external cavity

S. Mieda, S. Shiratori, N. Yokota, H. Yasaka, W. Kobayashi

Broadband Engineering Division

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An optically controlled semiconductor laser with broad 3-dB bandwidth is achieved by introducing a phase- and intensity-controllable external cavity into a DFB laser. The external cavity functions as a passive-feedback section for the semiconductor laser. The optimum structure of an optically controlled passive-feedback laser (OC-PFL) for widening the 3-dB bandwidth of the laser is numerically analyzed. A broad 3-dB bandwidth of up to 40 GHz is experimentally confirmed by using a fabricated OC-PFL with a structure designed on the basis of the analysis results. It is also experimentally confirmed that it is possible to achieve 3-dB bandwidth of more than 50 GHz.

Original language	English
Title of host publication	2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	121-123
Number of pages	3
ISBN (Electronic)	9784885522901
DOIs	https://doi.org/10.1109/MWP.2014.6994507
Publication status	Published - 2014 Dec 19
Event	2014 International Topical Meeting on Microwave Photonics, MWP 2014 and the 9th Asia-Pacific Microwave Photonics Conference, APMP 2014 - Sapporo, Japan Duration: 2014 Oct 20 → 2014 Oct 23

Publication series

Name	2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings

Other

Other	2014 International Topical Meeting on Microwave Photonics, MWP 2014 and the 9th Asia-Pacific Microwave Photonics Conference, APMP 2014
Country	Japan
City	Sapporo
Period	14/10/20 → 14/10/23

Keywords

optical control
passive feedback laser
photonphoton resonance

ASJC Scopus subject areas

Computer Networks and Communications
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/MWP.2014.6994507

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Cite this

Mieda, S., Shiratori, S., Yokota, N., Yasaka, H., & Kobayashi, W. (2014). High-speed optically controlled semiconductor light source with an external cavity. In 2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings (pp. 121-123). [6994507] (2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/MWP.2014.6994507

High-speed optically controlled semiconductor light source with an external cavity. / Mieda, S.; Shiratori, S.; Yokota, N.; Yasaka, H.; Kobayashi, W.

2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. p. 121-123 6994507 (2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Mieda, S, Shiratori, S, Yokota, N , Yasaka, H & Kobayashi, W 2014, High-speed optically controlled semiconductor light source with an external cavity. in 2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings., 6994507, 2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 121-123, 2014 International Topical Meeting on Microwave Photonics, MWP 2014 and the 9th Asia-Pacific Microwave Photonics Conference, APMP 2014, Sapporo, Japan, 14/10/20. https://doi.org/10.1109/MWP.2014.6994507

Mieda S, Shiratori S, Yokota N , Yasaka H, Kobayashi W. High-speed optically controlled semiconductor light source with an external cavity. In 2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2014. p. 121-123. 6994507. (2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings). https://doi.org/10.1109/MWP.2014.6994507

Mieda, S. ; Shiratori, S. ; Yokota, N. ; Yasaka, H. ; Kobayashi, W. / High-speed optically controlled semiconductor light source with an external cavity. 2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 121-123 (2014 International Topical Meeting on Microwave Photonics / the 9th Asia-Pacific Microwave Photonics Conference, MWP/APMP 2014 - Proceedings).

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AU - Shiratori, S.

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AU - Yasaka, H.

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N2 - An optically controlled semiconductor laser with broad 3-dB bandwidth is achieved by introducing a phase- and intensity-controllable external cavity into a DFB laser. The external cavity functions as a passive-feedback section for the semiconductor laser. The optimum structure of an optically controlled passive-feedback laser (OC-PFL) for widening the 3-dB bandwidth of the laser is numerically analyzed. A broad 3-dB bandwidth of up to 40 GHz is experimentally confirmed by using a fabricated OC-PFL with a structure designed on the basis of the analysis results. It is also experimentally confirmed that it is possible to achieve 3-dB bandwidth of more than 50 GHz.

AB - An optically controlled semiconductor laser with broad 3-dB bandwidth is achieved by introducing a phase- and intensity-controllable external cavity into a DFB laser. The external cavity functions as a passive-feedback section for the semiconductor laser. The optimum structure of an optically controlled passive-feedback laser (OC-PFL) for widening the 3-dB bandwidth of the laser is numerically analyzed. A broad 3-dB bandwidth of up to 40 GHz is experimentally confirmed by using a fabricated OC-PFL with a structure designed on the basis of the analysis results. It is also experimentally confirmed that it is possible to achieve 3-dB bandwidth of more than 50 GHz.

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