High-speed operation of static binary frequency divider using resonant tunnelling diodes and HEMTs

H. Matsuzaki; K. Arai; K. Maezawa; J. Osaka; M. Yamamoto; T. Otsuji

doi:10.1049/el:19980103

High-speed operation of static binary frequency divider using resonant tunnelling diodes and HEMTs

H. Matsuzaki, K. Arai, K. Maezawa, J. Osaka, M. Yamamoto, T. Otsuji

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

A new circuit technology using resonant tunnelling diodes and HEMTs makes the toggle frequency f_toggle of a static binary frequency divider close to the cutoff frequency f_t of the used 0.7 μm-gate HEMTs. f_toggle and f_t are 34 and 38GHz, respectively. This technology is promising for use in high-speed logic circuits.

Original language	English
Pages (from-to)	70-71
Number of pages	2
Journal	Electronics Letters
Volume	34
Issue number	1
DOIs	https://doi.org/10.1049/el:19980103
Publication status	Published - 1998 Jan 8
Externally published	Yes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1049/el:19980103

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abstract = "A new circuit technology using resonant tunnelling diodes and HEMTs makes the toggle frequency ftoggle of a static binary frequency divider close to the cutoff frequency ft of the used 0.7 μm-gate HEMTs. ftoggle and ft are 34 and 38GHz, respectively. This technology is promising for use in high-speed logic circuits.",

author = "H. Matsuzaki and K. Arai and K. Maezawa and J. Osaka and M. Yamamoto and T. Otsuji",

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AU - Otsuji, T.

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