High-speed operation of static binary frequency divider using resonant tunnelling diodes and HEMTs

H. Matsuzaki, K. Arai, K. Maezawa, J. Osaka, M. Yamamoto, T. Otsuji

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)

Abstract

A new circuit technology using resonant tunnelling diodes and HEMTs makes the toggle frequency ftoggle of a static binary frequency divider close to the cutoff frequency ft of the used 0.7 μm-gate HEMTs. ftoggle and ft are 34 and 38GHz, respectively. This technology is promising for use in high-speed logic circuits.

Original languageEnglish
Pages (from-to)70-71
Number of pages2
JournalElectronics Letters
Volume34
Issue number1
DOIs
Publication statusPublished - 1998 Jan 8
Externally publishedYes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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