High-speed operation of resonant tunnelling flip-flop circuit employing MOBILE (monostable-bistable transition logic element)

K. Maezawa, H. Matsuzaki, K. Arai, T. Otsuji, M. Yamamoto

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

A new flip-flop circuit employing a monostable-bistable transition logic element is proposed which was fabricated with resonant tunnelling diodes/HEMT integration technology on an InP substrate. Error free operations up to 18Gbit/s were demonstrated at room temperature.

Original languageEnglish
Pages (from-to)1733-1734
Number of pages2
JournalElectronics Letters
Volume33
Issue number20
DOIs
Publication statusPublished - 1997 Sep 25
Externally publishedYes

Keywords

  • High electron mobility transistors
  • Resonant tunnelling devices

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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