Abstract
A new flip-flop circuit employing a monostable-bistable transition logic element is proposed which was fabricated with resonant tunnelling diodes/HEMT integration technology on an InP substrate. Error free operations up to 18Gbit/s were demonstrated at room temperature.
Original language | English |
---|---|
Pages (from-to) | 1733-1734 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 33 |
Issue number | 20 |
DOIs | |
Publication status | Published - 1997 Sep 25 |
Externally published | Yes |
Keywords
- High electron mobility transistors
- Resonant tunnelling devices
ASJC Scopus subject areas
- Electrical and Electronic Engineering