High-speed operation of resonant tunnelling flip-flop circuit employing MOBILE (monostable-bistable transition logic element)

K. Maezawa; H. Matsuzaki; K. Arai; T. Otsuji; M. Yamamoto

doi:10.1049/el:19971176

High-speed operation of resonant tunnelling flip-flop circuit employing MOBILE (monostable-bistable transition logic element)

K. Maezawa, H. Matsuzaki, K. Arai, T. Otsuji, M. Yamamoto

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A new flip-flop circuit employing a monostable-bistable transition logic element is proposed which was fabricated with resonant tunnelling diodes/HEMT integration technology on an InP substrate. Error free operations up to 18Gbit/s were demonstrated at room temperature.

Original language	English
Pages (from-to)	1733-1734
Number of pages	2
Journal	Electronics Letters
Volume	33
Issue number	20
DOIs	https://doi.org/10.1049/el:19971176
Publication status	Published - 1997 Sep 25
Externally published	Yes

Keywords

High electron mobility transistors
Resonant tunnelling devices

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1049/el:19971176

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title = "High-speed operation of resonant tunnelling flip-flop circuit employing MOBILE (monostable-bistable transition logic element)",

abstract = "A new flip-flop circuit employing a monostable-bistable transition logic element is proposed which was fabricated with resonant tunnelling diodes/HEMT integration technology on an InP substrate. Error free operations up to 18Gbit/s were demonstrated at room temperature.",

keywords = "High electron mobility transistors, Resonant tunnelling devices",

author = "K. Maezawa and H. Matsuzaki and K. Arai and T. Otsuji and M. Yamamoto",

year = "1997",

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AU - Maezawa, K.

AU - Matsuzaki, H.

AU - Arai, K.

AU - Otsuji, T.

AU - Yamamoto, M.

PY - 1997/9/25

Y1 - 1997/9/25

N2 - A new flip-flop circuit employing a monostable-bistable transition logic element is proposed which was fabricated with resonant tunnelling diodes/HEMT integration technology on an InP substrate. Error free operations up to 18Gbit/s were demonstrated at room temperature.

AB - A new flip-flop circuit employing a monostable-bistable transition logic element is proposed which was fabricated with resonant tunnelling diodes/HEMT integration technology on an InP substrate. Error free operations up to 18Gbit/s were demonstrated at room temperature.

KW - High electron mobility transistors

KW - Resonant tunnelling devices

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