High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element)

Koichi Maezawa, Hideaki Matsuzaki, Kunihiro Arai, Taiichi Otsuji, Masafumi Yamamoto

Research output: Contribution to conferencePaper

8 Citations (Scopus)

Abstract

The high-speed operation of the monostable-bistable transition logic element (MOBILE) flip-flop (FF) circuit at room temperature is presented. This circuit consists of two serially connected negative differential resistance (NDR) devices capable of peak current modulation. The oscillatory varying bias voltage produces the mono-to-bistable transition and works as a clock signal. A small difference in the peak current between the two-NDR devices determines the circuit's state after transition. This indicates the promise of MOBILE-based FF circuits for high-speed digital applications.

Original languageEnglish
Pages94-95
Number of pages2
Publication statusPublished - 1997 Jan 1
Externally publishedYes
EventProceedings of the 1997 55th Annual Device Research Conference - Fort Collins, CO, USA
Duration: 1997 Jun 231997 Jun 25

Other

OtherProceedings of the 1997 55th Annual Device Research Conference
CityFort Collins, CO, USA
Period97/6/2397/6/25

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element)'. Together they form a unique fingerprint.

  • Cite this

    Maezawa, K., Matsuzaki, H., Arai, K., Otsuji, T., & Yamamoto, M. (1997). High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element). 94-95. Paper presented at Proceedings of the 1997 55th Annual Device Research Conference, Fort Collins, CO, USA, .